APTM100A23SCTG

APTM100A23SCTG Phase leg Series & SiC parallel diodes VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Symmetrical design Lead frames for power connections Internal thermistor for temperature monitoring High level of integration MOSFET Power Module NT C2 VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 NT C1 • • • • OUT VBUS OUT 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 1000 36 27 144 ±30 270 694 18 50 2500 Unit V A V mΩ W A mJ July, 2006 1-7 APTM100A23SCTG – Rev 2 Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM100A23SCTG All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 18A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 230 3 Max 200 1000 270 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 36A Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 36A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5 Ω Min Typ 8700 1430 240 308 52 194 10 12 121 35 767 760 1255 902 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 1.1 1.4 0.9 24 48 66 300 1.15 V July, 2006 2-7 APTM100A23SCTG – Rev 2 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTM100A23SCTG Parallel SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions VR=1200V Min 1200 Typ 200 400 20 1.6 2.6 56 180 132 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.18 0.65 0.8 150 125 100 4.7 160 Typ 50 3952 Max Max 800 4000 1.8 3.0 Unit V µA A V nC pF Tj = 25°C Tj = 150°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 600V di/dt =1200A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W P arallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 4-7 APTM100A23SCTG – Rev 2 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS =20V 20 40 60 80 100 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100A23SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 100 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=18A 1000 100µs 100 limited by RDSon 1ms 10 Single pulse TJ =150°C TC=25°C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=36A TJ=25°C VDS=200V V DS =500V VDS=800V 10000 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-7 APTM100A23SCTG – Rev 2 APTM100A23SCTG Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current t d(on) 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80 V DS=667V RG =2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 60 VDS=667V RG=2.5Ω TJ=125°C L=100µH td(off) tr and tf ( ns) 50 40 30 20 tf tr Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=667V ID=36A T J=125°C L=100µH 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 10 V DS =667V RG =2.5Ω T J=125°C L=100µH Eon Eoff Eoff 4 3 2 1 0 Eon Eoff 20 30 40 50 60 70 80 0 3 5 8 10 13 15 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=667V D=50% RG=2.5Ω T J=125°C T C=75°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 14 18 22 26 30 I D, Drain Current (A) 34 Hard switching ZCS ZVS 100 TJ=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTM100A23SCTG – Rev 2 APTM100A23SCTG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.7 0.5 0.9 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 40 I F Forward Current (A) 800 IR Reverse Current (µA) 30 20 TJ=75°C 600 400 200 0 400 T J=125°C T J=75°C T J=125°C T J=175°C T J=25°C 10 0 0 0.5 1 1.5 2 TJ=175°C 2.5 3 3.5 600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 1000 1200 1400 1600 VR Reverse Voltage (V) 1600 C, Capacitance (pF) 1200 800 400 0 July, 2006 7-7 APTM100A23SCTG – Rev 2 1 10 100 VR Reverse Voltage 1000 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. 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