APTM100AM90FG
Phase leg MOSFET Power Module
VBUS Q1
VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C
Applicatio n • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 OUT S1 Q2
Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
S2
0/VBUS
• • •
VBUS 0/VBUS OUT
G1 S1
Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1–6
APTM100AM90FG– Rev 2
Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000
Unit V A V mΩ W A
July, 2006
APTM100AM90FG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C
Min
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V
90 3
Max 400 2000 105 5 ±250
Unit µA mΩ V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 78A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A R G =1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Ω
Min
Typ 20.7 3.5 0.64 744 96 488 18 12 155 40 3.6 2.5 5.7 3.1
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25°C Tc = 80°C
Min
Typ
VGS = 0 V, IS = - 78A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 14.4 38.9
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2–6
APTM100AM90FG– Rev 2
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
July, 2006
IS = - 78A VR = 670V diS/dt = 400A/µs
Max 78 59 1.3 18 320 650
Unit A V V/ns ns µC
APTM100AM90FG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
200 160 120 80 40 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
T J=-55°C
25
6
7
8
9
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 39A V GS=10V
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150
July, 2006 4–6 APTM100AM90FG– Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=20V
40
80
120
160
200
240
ID, Drain Current (A)
TC, Case Temperature (°C)
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APTM100AM90FG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area
VGS =10V ID=39A
1000
100µs limited by R DSon
100
1ms
10
Single pulse TJ=150°C TC=25°C
10ms
1 1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=78A TJ=25°C
VDS=200V V DS =500V V DS=800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5–6
APTM100AM90FG– Rev 2
APTM100AM90FG
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current
V DS=670V RG =1.2Ω T J=125°C L=100µH
Rise and Fall times vs Current 80
VDS=670V RG=1.2Ω TJ=125°C L=100µH
t d(off) tr and tf ( ns)
tf
60
40 tr 20
td(on)
0 20 40 60 80 100 120 140 160 I D, Drain Current (A)
Switching Energy vs Gate Resistance 14 Switching Energy (mJ) 12 10 8 6 4 2 0 0 2 4 6 8 Eoff Eon
VDS=670V ID=78A T J=125°C L=100µH
10
Switching Energy (mJ)
8 6 4 2 0 20
VDS=670V RG=1.2Ω TJ=125°C L=100µH
Eon
Eoff
Eoff
40
60
80
100 120 140 160
I D, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
250 200 Frequency (kHz)
ZCS
100
TJ=150°C TJ=25°C
150 100 50 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70
VDS=670V D=50% RG=1.2Ω T J=125°C T C=75°C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006 6–6 APTM100AM90FG– Rev 2
M icrosemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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