APTM100DA18CT1G

APTM100DA18CT1G Boost chopper MOSFET + SiC chopper diode Power Module 5 6 11 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 40A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features 3 4 NTC • Q2 9 10 1 2 Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged 12 • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 1000 40 30 260 ±30 216 657 33 Unit V A V mΩ W A September, 2009 1–5 APTM100DA18CT1G – Rev 0 Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM100DA18CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 100 500 216 5 ±100 Unit µA mΩ V nA 3 180 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 33A Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 33A RG = 2.2Ω Min Typ 14800 1555 196 570 100 270 85 75 285 70 ns nC Max Unit pF SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 64 112 20 1.6 2.3 80 192 138 Max 400 2000 1.8 3 Unit V µA A V nC pF IF = 20A, VR = 600V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor SiC Diode Min Typ Max 0.19 1 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 VGS=10V ID=33A 50 40 30 20 TJ=25°C 10 0 0 1 2 3 4 5 6 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 100 200 300 400 500 600 VDS=800V ID=33A TJ=25°C VDS=200V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) VDS=500V 10000 1000 Coss 100 Crss 10 September, 2009 APTM100DA18CT1G – Rev 0 0 50 100 150 200 Gate Charge (nC) VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 APTM100DA18CT1G Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (°C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 200 TJ=25°C 40 IF Forward Current (A) IR Reverse Current (µA) 30 TJ=75°C 150 20 TJ=125°C 100 TJ=75°C TJ=125°C TJ=175°C TJ=25°C 10 TJ=175°C 50 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 September, 2009 5–5 APTM100DA18CT1G – Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com