APTM100DSK35T3G

APTM100DSK35T3G Dual Buck chopper MOSFET Power Module 13 14 Q1 Q2 11 22 19 CR1 23 8 CR 2 7 10 VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability • RoHS Compliant 18 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100DSK35T3G– Rev 1 July, 2006 Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V A V mΩ W A APTM100DSK35T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0 V 350 3 Max 100 500 420 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 22A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Ω Min Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779 Max Unit nF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1000V IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt=200A/µs Tj = 25°C Tj = 125°C Tc = 70°C Min 1000 Typ Max 250 500 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 1.9 2.2 1.7 290 390 670 2350 2.3 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM100DSK35T3G– Rev 1 July, 2006 trr Reverse Recovery Time ns APTM100DSK35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V TJ=-55°C 25 6 7 8 9 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 11A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V V GS=20V 10 20 30 40 50 60 25 50 75 100 125 150 APTM100DSK35T3G– Rev 1 July, 2006 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–6 APTM100DSK35T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) APTM100DSK35T3G– Rev 1 July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=11A 100 limited by RDSon 100µs 10 Single pulse TJ =150°C TC=25°C 1 1 1ms 10ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=22A TJ=25°C VDS=200V VDS=500V V DS =800V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM100DSK35T3G Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf ( ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current V DS=670V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 t d(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 tr VDS=670V RG=5Ω TJ=125°C L=100µH tf td(on) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eoff Eon VDS=670V ID=22A TJ=125°C L=100µH 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 V DS=670V RG=5Ω T J=125°C L=100µH Eon Eoff E off 10 20 30 40 50 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 Frequency (kHz) 250 225 200 175 150 125 100 75 50 25 0 5 ZCS 100 T J=150°C VDS=670V D=50% RG=5Ω T J=125°C T C=75°C 10 T J=25°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM100DSK35T3G– Rev 1 July, 2006 8 10 13 15 18 ID, Drain Current (A) 20 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6