APTM100DU18TG

APTM100DU18TG Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G2 S1 S NTC1 S2 NTC2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G2 S2 D2 D1 S D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100DU18TG– Rev 1 July, 2006 Tc = 25°C Max ratings 1000 43 33 172 ±30 210 780 25 50 3000 Unit V A V mΩ W A APTM100DU18TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Min Typ VGS = 10V, ID = 21.5A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 180 3 Max 200 1000 210 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Min Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 43A IS = - 43A, VR = 670V diS/dt = 200A/µs 1170 32.5 Max 43 33 1.3 10 Unit A V V/ns ns µC July, 2006 2–6 APTM100DU18TG– Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM100DU18TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V T J=-55°C 25 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 21.5A VGS=10V VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 4–6 APTM100DU18TG– Rev 1 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=20V 20 40 60 80 100 120 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100DU18TG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=21.5A 1000 100µs 100 limited by R DSon 1ms 10 Single pulse TJ =150°C TC=25°C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 ID=43A TJ =25°C VDS=200V VDS=500V V DS =800V 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM100DU18TG– Rev 1 APTM100DU18TG Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current V DS=670V RG =2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 V DS =670V RG =2.5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) tf 60 40 tr 20 t d(on) 0 10 30 50 70 I D, Drain Current (A) 90 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 7 Switching Energy (mJ) V DS =670V RG =2.5Ω T J=125°C L=100µH Eon 4 3 2 1 0 6 5 4 3 2 1 0 0 Eoff VDS=670V ID=43A T J=125°C L=100µH Eoff Eon Eoff 10 30 50 70 90 5 10 15 20 I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 200 Frequency (kHz) ZCS ZVS 1000 100 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C T J=150°C T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100DU18TG– Rev 1