APTM100DUM90G

APTM100DUM90G Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C Applicatio n • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies G1 G2 S1 S S2 G1 S1 D1 S D2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100DUM90G– Rev 1 July, 2006 APTM100DUM90G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 90 3 Max 400 2000 105 5 ±250 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 78A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A R G =1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Ω Min Typ 20.7 3.5 0.64 744 96 488 18 12 155 40 3.6 2.5 5.7 3.1 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 78A IS = - 78A, VR = 670V diS/dt = 400A/µs 1170 65.1 Max 78 59 1.3 10 Unit A V V/ns ns µC www.microsemi.com 2–6 APTM100DUM90G– Rev 1 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APTM100DUM90G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 200 160 120 80 40 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V T J=-55°C 25 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 39A V GS=10V VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 July, 2006 4–6 APTM100DUM90G– Rev 1 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=20V 40 80 120 160 200 240 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100DUM90G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=39A 1000 100µs limited by R DSon 100 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=78A TJ=25°C VDS=200V V DS =500V V DS=800V Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM100DUM90G– Rev 1 APTM100DUM90G Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current V DS=670V RG =1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=670V RG=1.2Ω TJ=125°C L=100µH t d(off) tr and tf ( ns) tf 60 40 tr 20 td(on) 0 20 40 60 80 100 120 140 160 I D, Drain Current (A) Switching Energy vs Gate Resistance 14 Switching Energy (mJ) 12 10 8 6 4 2 0 0 2 4 6 8 Eoff Eon VDS=670V ID=78A T J=125°C L=100µH 10 Switching Energy (mJ) 8 6 4 2 0 20 VDS=670V RG=1.2Ω TJ=125°C L=100µH Eon Eoff Eoff 40 60 80 100 120 140 160 I D, Drain Current (A) Operating Frequency vs Drain Current ZVS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 250 200 Frequency (kHz) ZCS 100 TJ=150°C TJ=25°C 150 100 50 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 VDS=670V D=50% RG=1.2Ω T J=125°C T C=75°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100DUM90G– Rev 1