APTM100H40FT3G

APTM100H40FT3G Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 18 22 19 Q2 23 8 Q4 7 11 10 Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 26 4 27 29 15 30 31 R1 32 16 3 • • • Benefits • • • • • • • 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Max ratings 1000 21 16 140 ±30 480 390 18 Unit V A V mΩ W A June, 2009 1–5 APTM100H40FT3G – Rev 0 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM100H40FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 250 1000 480 5 ±100 Unit µA mΩ V nA 3 400 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 18A RG = 2.2Ω Min Typ 7868 825 104 305 55 145 44 40 150 38 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 18A IS = - 18A VR = 100V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ Max 21 16 1.1 25 300 650 Unit A V V/ns ns µC 1.61 4.21 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 16A di/dt ≤ 1000A/µs VDD ≤ 667V Tj ≤ 125°C www.microsemi.com 2–5 APTM100H40FT3G – Rev 0 June, 2009 APTM100H40FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C TJ=25°C 1 2 3 4 5 6 7 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VDS=800V VGS=10V ID=18A VDS=200V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 1000 100 10 1 0 50 100 150 200 June, 2009 4–5 APTM100H40FT3G – Rev 0 Ciss C, Capacitance (pF) VDS=500V Coss Crss VDS, Drain to Source Voltage (V) www.microsemi.com APTM100H40FT3G Drain Current vs Source to Drain Voltage 50 ISD, Reverse Drain Current (A) 40 TJ=125°C 30 20 10 0 0 0.3 0.6 0.9 1.2 TJ=25°C VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (°C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 Single Pulse 0.9 0.7 0.5 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100H40FT3G – Rev 0 June, 2009