APTM100H45STG

APTM100H45STG Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 OUT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy T c = 25°C T c = 80°C T c = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100H45STG – Rev 3 Max ratings 1000 18 14 72 ±30 540 357 18 50 2500 Unit V A V mΩ W A mJ July, 2006 APTM100H45STG All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 9 A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 450 3 Max 100 500 540 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, R G = 5Ω Min Typ 4350 715 120 154 26 97 10 12 121 35 639 380 1046 451 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 250 500 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 ns nC www.microsemi.com 2–7 APTM100H45STG – Rev 3 July, 2006 Tj = 125°C 30 1.1 1.4 0.9 1.15 V APTM100H45STG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt = 200A/µs Test Conditions VR=1000V Tj = 25°C Tj = 125°C Tc = 65°C Min 1000 Typ Max 250 500 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 1.9 2.2 1.7 290 390 670 2350 2.3 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode Min Typ Max 0.35 1.2 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 July, 2006 5–7 APTM100H45STG – Rev 3 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 50 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100H45STG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=9A 100 100µs limited by RDSon 1ms 10 10ms 1 Single pulse TJ=150°C TC=25°C 0 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=18A TJ=25°C VDS=200V V DS =500V VDS=800V 10000 Ciss Coss Crss 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 6–7 APTM100H45STG – Rev 3 APTM100H45STG Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Switching Energy vs Current td(on) 10 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 VDS=667V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 60 V DS =667V RG =5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) 50 40 30 20 tf tr Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) V DS =667V ID=18A T J=125°C L=100µH 2 Switching Energy (mJ) 1.5 1 0.5 0 5 V DS =667V RG =5Ω T J=125°C L=100µH Eon Eoff 2 1.5 1 E off Eon Eoff 0.5 0 10 15 20 25 30 35 40 0 5 10 15 20 25 30 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=667V D=50% RG=5Ω T J=125°C T C=75°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 ZCS ZVS 100 TJ=150°C 150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18 Hard switching 10 T J=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100H45STG – Rev 3