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APTM100H80FT1G

APTM100H80FT1G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    SP1

  • 描述:

    MOSFET 4N-CH 1000V 11A SP1

  • 数据手册
  • 价格&库存
APTM100H80FT1G 数据手册
APTM100H80FT1G Full - Bridge MOSFET Power Module 3 Q1 4 Q3 2 6 Q2 7 1 Q4 9 VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • 5 8 NTC 10 11 12 Pins 3/4 must be shorted together • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 1000 11 8 68 ±30 960 208 9 Unit V A V mΩ W A December, 2007 1–5 APTM100H80FT1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM100H80FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 1mA VGS = ±30 V Min Typ Max 250 1000 960 5 ±100 Unit µA mΩ V nA 3 800 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 9A Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 9A RG = 4.7Ω Min Typ 3876 405 52 150 26 70 29 31 105 28 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 9A Tj = 25°C IS = - 9A VR = 100V diS/dt = 100A/µs Tj = 125°C Tj = 25°C Tj = 125°C 1.02 2.57 Min Typ Max 11 8 1 25 245 465 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 9A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C December, 2007 www.microsemi.com 2–5 APTM100H80FT1G – Rev 0 APTM100H80FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C 7.5 5 2.5 0 0 1 2 3 4 5 6 TJ=25°C TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) VDS=800V VGS=10V ID=9A VDS=200V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 Ciss C, Capacitance (pF) VDS=500V 1000 Coss 100 Crss 10 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 APTM100H80FT1G – Rev 0 December, 2007 1 APTM100H80FT1G Drain Current vs Source to Drain Voltage 25 ISD, Reverse Drain Current (A) 20 TJ=125°C 15 10 TJ=25°C 5 0 0 0.3 0.6 0.9 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (°C/W) 0.6 0.5 0.4 0.5 0.9 0.7 0.3 0.2 0.1 0.3 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100H80FT1G – Rev 0 December, 2007
APTM100H80FT1G 价格&库存

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