APTM100UM45DAG

APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G DK S DK D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 1000 215 160 860 ±30 52 5000 30 50 3200 Unit V A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM45DAG – Rev 3 May, 2008 APTM100UM45DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V 45 3 Max 600 3 52 5 ±600 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 215A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 215A RG = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω Min Typ 42.7 7.6 1.3 1602 204 1038 18 14 140 55 7.2 4.3 12 5.8 mJ mJ nC Max Unit nF ns Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 360A IF = 720A IF = 360A IF = 360A VR = 800V di/dt = 1200A/µs Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 125°C Tj = 80°C Typ Max 600 2000 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 360 2.5 3 1.8 265 350 3.3 17.3 3 V May, 2008 2–6 APTM100UM45DAG – Rev 3 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns µC www.microsemi.com APTM100UM45DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.025 0.16 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V 6.5V 600 480 360 240 120 0 TJ=25°C TJ=125°C TJ=-55°C 30 0 1 2 3 4 5 6 7 8 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 107.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 240 210 180 150 120 90 60 30 0 25 50 75 100 125 150 May, 2008 4–6 APTM100UM45DAG – Rev 3 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 120 240 360 480 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100UM45DAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) limited by RDSon 100µs VGS=10V ID=107.5A TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss Coss VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=215A TJ=25°C VDS=200V VDS=500V VDS=800V 10000 Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 350 700 1050 1400 1750 2100 May, 2008 Gate Charge (nC) www.microsemi.com 5–6 APTM100UM45DAG – Rev 3 APTM100UM45DAG Delay Times vs Current 150 td(on) and td(off) (ns) 120 90 60 30 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy vs Current VDS=670V RG=0.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 100 td(off) 80 VDS=670V RG=0.5Ω TJ=125°C L=100µH tf tr and tf (ns) 60 40 tr 20 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy vs Gate Resistance 36 VDS=670V ID=215A TJ=125°C L=100µH td(on) 24 Switching Energy (mJ) Switching Energy (mJ) 20 16 12 8 4 0 VDS=670V RG=0.5Ω TJ=125°C L=100µH Eon Eoff 30 24 18 12 6 0 Eoff Eon Eoff 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=670V D=50% RG=0.5Ω TJ=125°C TC=75°C 0 1 2 3 4 5 6 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150°C 800 Frequency (kHz) 600 100 TJ=25°C 400 ZCS 10 200 Hard switching 0 20 50 80 110 140 170 200 ID, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 May, 2008 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM45DAG – Rev 3