APTM100UM45FAG

APTM100UM45FAG Single Switch MOSFET Power Module SK S D VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM45FAG – Rev 2 Max ratings 1000 215 160 860 ±30 52 5000 30 50 3200 Unit V A V mΩ W A July, 2006 APTM100UM45FAG All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0 V 45 3 Max 600 3 52 5 ±600 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 215A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 215A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5 Ω Min Typ 42.7 7.6 1.3 1602 204 1038 18 14 140 55 7.2 4.3 12 5.8 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 215A IS = - 215A VR = 670V diS/dt = 600A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 12 36 Max 215 160 1.3 18 310 625 Unit A V V/ns ns µC July, 2006 2–6 APTM100UM45FAG – Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 215A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM100UM45FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V 6.5V 600 480 360 240 120 0 TJ=25°C TJ=125°C T J=-55°C 30 0 1 2 3 4 5 6 7 8 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 107.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 240 210 180 150 120 90 60 30 0 25 50 75 100 125 150 July, 2006 4–6 APTM100UM45FAG – Rev 2 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 120 240 360 480 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100UM45FAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss Coss VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 350 700 1050 1400 1750 2100 July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=107.5A 1000 limited by R DSon 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=215A TJ=25°C VDS=200V VDS=500V VDS=800V 10000 Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–6 APTM100UM45FAG – Rev 2 APTM100UM45FAG Delay Times vs Current 150 td(on) and td(off) (ns) 120 90 60 30 0 80 120 160 200 240 280 320 360 400 I D, Drain Current (A) Switching Energy vs Current V DS=670V RG =0.5Ω T J=125°C L=100µH Rise and Fall times vs Current 100 VDS=670V RG=0.5Ω T J=125°C L=100µH t d(off) tf 80 tr and tf (ns) 60 40 tr 20 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy vs Gate Resistance td(on) 24 Switching Energy (mJ) Switching Energy (mJ) 20 16 12 8 4 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=670V RG=0.5Ω TJ=125°C L=100µH Eon 36 30 24 18 12 6 0 0 VDS=670V ID=215A T J=125°C L=100µH Eoff Eoff Eon Eoff 1 2 3 4 5 6 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 Frequency (kHz) 200 150 100 50 0 20 50 80 110 140 170 ID, Drain Current (A) 200 VDS=670V D=50% RG=0.5Ω T J=125°C T C=75°C ZCS ZVS IDR, Reverse Drain Current (A) 300 1000 T J=150°C 100 T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM45FAG – Rev 2