APTM100UM65DAG

APTM100UM65DAG Single switch with Series diode MOSFET Power Module SK S D VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Applicatio n • Zero Current Switching resonant mode G DK Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM65DAG – Rev 1 Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A mJ July, 2006 APTM100UM65DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0 V 65 3 Max 400 2 78 5 ±400 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 500V ID = 145A R G = 0.75Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Ω Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs Min Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 4.8 2.9 8 3.9 Max Unit nF nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Min 1000 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1000V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 240 2 2.2 1.7 280 350 3.04 14.4 2.5 V Reverse Recovery Charge µC www.microsemi.com 2–6 APTM100UM65DAG – Rev 1 July, 2006 Reverse Recovery Time ns APTM100UM65DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V 6.5V 400 320 240 160 80 0 TJ=25°C TJ=125°C T J=-55°C 30 0 1 2 3 4 5 6 7 8 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 72.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V V GS=20V 80 160 240 320 25 50 75 100 125 150 July, 2006 4–6 APTM100UM65DAG – Rev 1 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM100UM65DAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500 July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=72.5A 1000 100µs limited by R DSon 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=145A TJ =25°C VDS=200V VDS=500V V DS =800V Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–6 APTM100UM65DAG – Rev 1 APTM100UM65DAG Delay Times vs Current 160 t d(off) td(on) and td(off) (ns) 120 V DS=670V RG=0.75Ω T J=125°C L=100µH Rise and Fall times vs Current 100 80 V DS =670V RG =0.75Ω T J=125°C L=100µH tf tr and tf (ns) 60 40 20 0 tr 80 40 t d(on) 0 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy vs Current 50 94 138 182 226 I D, Drain Current (A) 270 Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 12 10 8 6 4 2 0 50 94 138 182 226 270 ID, Drain Current (A) Operating Frequency vs Drain Current 26 Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 14 Eon 22 18 14 10 6 2 0 V DS=670V ID=145A T J=125°C L=100µH Eoff Eoff Eon E off 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 Frequency (kHz) ZCS IDR, Reverse Drain Current (A) 300 1000 200 150 100 50 0 15 35 55 75 95 115 ID, Drain Current (A) 135 VDS=670V D=50% RG=0.75Ω T J=125°C T C=75°C 100 T J=150°C T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM65DAG – Rev 1