APTM100UM65DAG
Single switch with Series diode MOSFET Power Module
VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C
Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100UM65DAG – Rev 2
June, 2008
APTM100UM65DAG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25°C Tj = 125°C
Min
Typ
VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V
65 3
Max 400 2 78 5 ±400
Unit µA mA mΩ V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 500V ID = 145A RG = 0.75Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Min Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 4.8 2.9 8 3.9 mJ mJ nC Max Unit nF
ns
Series diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V
Min 1000
Typ
Max 750 1000
Unit V µA A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1000V
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
240 2 2.2 1.7 280 350 3.04 14.4
2.5 V ns µC
di/dt = 800A/µs
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APTM100UM65DAG – Rev 2
June, 2008
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
7V 6.5V
400 320 240 160 80 0
TJ=25°C TJ=125°C
TJ=-55°C
30
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 72.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
80
160
240
320
25
50
75
100
125
150
June, 2008 4–6 APTM100UM65DAG – Rev 2
ID, Drain Current (A)
TC, Case Temperature (°C)
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APTM100UM65DAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000
100µs VGS=10V ID=72.5A
TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0
limited by RDSon
100
1ms
10
Single pulse TJ=150°C TC=25°C 1
10ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=145A TJ=25°C
VDS=200V VDS=500V VDS=800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
300
600
900
1200
1500
June, 2008
Gate Charge (nC)
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APTM100UM65DAG – Rev 2
APTM100UM65DAG
Delay Times vs Current 160 td(off) td(on) and td(off) (ns) 120
VDS=670V RG=0.75Ω TJ=125°C L=100µH
Rise and Fall times vs Current 100 80
VDS=670V RG=0.75Ω TJ=125°C L=100µH
tf
tr and tf (ns)
60 40 20 0 tr
80
40
td(on)
0 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy vs Current
50
94
138 182 226 ID, Drain Current (A)
270
Switching Energy vs Gate Resistance 26 Switching Energy (mJ)
VDS=670V ID=145A TJ=125°C L=100µH
16
Switching Energy (mJ)
14 12 10 8 6 4 2 0 50
VDS=670V RG=0.75Ω TJ=125°C L=100µH
Eon
22 18 14 10 6 2
Eoff
Eoff
Eon
Eoff
94
138
182
226
270
0
1
2
3
4
5
6
7
8
ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz)
ZCS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
200 150 100 50 0 15 35 55 75 95 115 135 ID, Drain Current (A)
VDS=670V D=50% RG=0.75Ω TJ=125°C TC=75°C
100
TJ=150°C TJ=25°C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
June, 2008
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100UM65DAG – Rev 2