APTM100VDA35T3G

APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction (PFC) • Interleaved PFC Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 16 15 28 27 26 25 29 30 23 22 20 19 18 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V September, 2009 1–7 APTM100VDA35T3G– Rev 0 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM100VDA35T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0V 350 3 Max 100 500 420 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 22A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω Min Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779 µJ µJ ns nC Max Unit nF Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 40A IF = 80A IF = 40A IF = 40A VR = 667V di/dt=200A/µs Test Conditions VR=1000V Tj = 25°C Tj = 125°C Tc = 80°C Min 1000 Typ Max 100 500 40 2.5 3.1 2 250 310 415 1650 3 V September, 2009 2–7 APTM100VDA35T3G– Rev 0 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTM100VDA35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Chopper diode 4000 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V TJ=-55°C 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 10 20 30 40 50 60 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100VDA35T3G– Rev 0 September, 2009 APTM100VDA35T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 limited by RDSon 100µs VGS=10V ID=11A TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 10 Single pulse TJ=150°C TC=25°C 1 1 1ms 10ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=22A TJ=25°C VDS=200V VDS=500V VDS=800V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–7 APTM100VDA35T3G– Rev 0 September, 2009 50 100 150 200 250 APTM100VDA35T3G Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf (ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current VDS=670V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 80 td(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 ID, Drain Current (A) 50 tr VDS=670V RG=5Ω TJ=125°C L=100µH tf td(on) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eoff Eon VDS=670V ID=22A TJ=125°C L=100µH 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 VDS=670V RG=5Ω TJ=125°C L=100µH Eon Eoff Eoff 10 20 30 40 50 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 225 200 Frequency (kHz) 175 150 125 100 75 50 25 0 5 ZCS 100 TJ=150°C VDS=670V D=50% RG=5Ω TJ=125°C TC=75°C 10 TJ=25°C Hard switching 1 VSD, Source to Drain Voltage (V) September, 2009 6–7 APTM100VDA35T3G– Rev 0 8 10 13 15 18 ID, Drain Current (A) 20 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 www.microsemi.com APTM100VDA35T3G Typical chopper diode performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 80 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 400 350 300 250 200 150 100 0 Trr vs. Current Rate of Charge TJ=125°C VR=667V 60 TJ=125°C 40 80 A 40 A 20 A 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125°C VR=667V 200 400 600 800 1000 1200 -diF/dt (A/µs) IRRM vs. Current Rate of Charge TJ=125°C VR=667V 80 A 20 A 40 A QRR, Reverse Recovery Charge (µC) 3 IRRM, Reverse Recovery Current (A) 4 80 A 40 30 20 10 0 0 40 A 2 20 A 1 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 175 C, Capacitance (pF) 150 125 100 75 50 0 1 10 100 1000 VR, Reverse Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100VDA35T3G– Rev 0 September, 2009 25