APTM10AM02FG

APTM10AM02FG Phase leg MOSFET Power Module VBUS Q1 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G1 OUT S1 Q2 G2 S2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10AM02FG– Rev 1 July, 2006 Tc = 25°C Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A APTM10AM02FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 2.25 2 Max 400 2000 2.5 4 ±400 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 400A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 400A R G = 1.25Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, R G =1.25 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, R G = 1.25Ω Min Typ 40 15.7 5.9 1360 240 720 160 240 500 160 2.2 2.41 2.43 2.56 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 400A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.6 6.8 IS = - 400A VR = 66V diS/dt = 400A/µs Max 495 370 1.3 5 190 370 Unit A V V/ns ns µC July, 2006 2-6 APTM10AM02FG– Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 495A di/dt ≤ 400A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM10AM02FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 80 0 8V 1000 7V 500 0 0 4 8 12 16 20 6V T J=25°C T J=125°C T J=-55°C 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 200A 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 500 400 300 200 100 0 1.1 VGS =10V 1 0.9 0.8 0 100 200 300 400 500 ID, Drain Current (A) VGS=20V 25 50 75 100 125 150 July, 2006 TC, Case Temperature (°C) www.microsemi.com 4-6 APTM10AM02FG– Rev 1 APTM10AM02FG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 200A 10000 limited by RDSon 1000 100µs 100 Single pulse TJ=150°C TC=25°C 1 1ms 10ms 10 1 10 100 VDS , Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 400 800 1200 1600 2000 Gate Charge (nC) July, 2006 VDS=50V V DS =80V ID=400A TJ=25°C V DS =20V C, Capacitance (pF) Coss 10000 Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM10AM02FG– Rev 1 APTM10AM02FG Delay Times vs Current 600 500 t d(on) and td(off) (ns) t r and tf (ns) 400 300 200 100 0 50 150 250 350 450 550 I D, Drain Current (A) 650 VDS=66V RG=1.25Ω T J=125°C L=100µH Rise and Fall times vs Current 300 250 tr t d(off) 200 150 100 50 0 50 150 250 350 450 550 ID, Drain Current (A) 650 tf VDS=66V RG=1.25Ω T J=125°C L=100µH td(on) Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 Eoff VDS=66V RG=1.25Ω TJ=125°C L=100µH E off Switching Energy vs Gate Resistance 9 8 7 6 5 4 3 2 1 0 2.5 5 7.5 10 12.5 15 Eon V DS =66V ID=400A T J=125°C L=100µH Eon and Eoff ( mJ) Eoff Eon 0 50 150 250 350 450 550 650 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 60 50 Frequency (kHz) ZCS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 40 30 20 10 0 100 VDS=66V D=50% RG=1.25Ω T J=125°C T C=75°C ZVS 100 TJ=25°C Hard switching 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 200 300 400 500 ID, Drain Current (A) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10AM02FG– Rev 1