APTM10DHM09TG

APTM10DHM09TG Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2 NTC1 VBUS SENSE G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM10DHM09TG – Rev 1 Max ratings 100 139 100 430 ±30 10 390 100 50 3000 Unit V A V mΩ W A mJ July, 2006 APTM10DHM09TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Typ Tj = 25°C Tj = 125°C 9 2 VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V Max 100 500 10 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Min Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/µs Min 200 Typ Max 250 500 Unit V µA A V ns nC July, 2006 2–6 APTM10DHM09TG – Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1 1.4 0.9 60 110 200 840 www.microsemi.com APTM10DHM09TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 20 0 8V 7V 6V T J=25°C T J=125°C T J=-55°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 69.5A 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150 July, 2006 4–6 APTM10DHM09TG – Rev 1 1.1 V GS=10V 1 0.9 0.8 0 50 100 150 200 ID, Drain Current (A) VGS=20V TC, Case Temperature (°C) www.microsemi.com APTM10DHM09TG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 69.5A 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 1 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 July, 2006 VDS=50V V DS =80V ID=139A T J=25°C VDS=20V 10000 Ciss Coss Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–6 APTM10DHM09TG – Rev 1 APTM10DHM09TG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 I D, Drain Current (A) Switching Energy vs Current 1.5 Switching Energy (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH VDS=66V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 250 0 50 100 150 200 ID, Drain Current (A) 250 V DS=66V R G=5Ω T J=125°C L=100µH t d(off) tf tr td(on) Switching Energy vs Gate Resistance 2.5 VDS=66V ID=139A T J=125°C L=100µH Eon and Eoff ( mJ) Eoff 2 1.5 1 0.5 0 Eoff 1 Eon 0.5 Eon Eon 0 0 50 100 150 200 250 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω T J=125°C T C=75°C ZVS Hard switching ZCS 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 I D, Drain Current (A) 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 July, 2006 VSD, Source to Drain Voltage (V) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM10DHM09TG – Rev 1 M icrosemi reserves the right to change, without notice, the specifications and information contained herein