APTM10DSKM09T3G

APTM10DSKM09T3G Dual Buck chopper MOSFET Power Module 13 14 Q1 Q2 11 22 19 CR1 23 8 CR2 7 10 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability • RoHS Compliant 18 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM10DSKM09T3G – Rev 1 Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 mΩ PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. Parameter Drain - Source Breakdown Voltage July, 2006 APTM10DSKM09T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 9 2 Max 100 500 10 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Min Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/µs Min 200 Typ Max 250 500 Unit V µA A V ns nC July, 2006 2–6 APTM10DSKM09T3G – Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1 1.4 0.9 60 110 200 840 www.microsemi.com APTM10DSKM09T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 20 0 8V 7V 6V T J=25°C T J=125°C T J=-55°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 69.5A 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150 July, 2006 4–6 APTM10DSKM09T3G – Rev 1 1.1 V GS=10V 1 0.9 0.8 0 50 100 150 200 ID, Drain Current (A) VGS=20V TC, Case Temperature (°C) www.microsemi.com APTM10DSKM09T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 69.5A 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 1 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 July, 2006 VDS=50V V DS =80V ID=139A T J=25°C VDS=20V 10000 Ciss Coss Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5–6 APTM10DSKM09T3G – Rev 1 APTM10DSKM09T3G Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 I D, Drain Current (A) Switching Energy vs Current 1.5 Switching Energy (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH VDS=66V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 250 0 50 100 150 200 ID, Drain Current (A) 250 V DS=66V R G=5Ω T J=125°C L=100µH t d(off) tf tr td(on) Switching Energy vs Gate Resistance 2.5 VDS=66V ID=139A T J=125°C L=100µH Eon and Eoff ( mJ) Eoff 2 1.5 1 0.5 0 Eoff 1 Eon 0.5 Eon Eon 0 0 50 100 150 200 250 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω T J=125°C T C=75°C ZVS Hard switching ZCS 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 I D, Drain Current (A) 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 July, 2006 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM10DSKM09T3G – Rev 1