APTM10DUM05TG_10

APTM10DUM05TG Dual common source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G2 S1 S NTC1 S2 NTC2 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G2 S2 D2 D1 S D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DUM05TG– Rev 2 January, 2010 APTM10DUM05TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 4.5 2 Max 200 1000 5 4 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 250A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A RG = 2.5 Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, RG =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, RG = 2.5Ω Min Typ 20 8 2.9 700 120 360 80 165 280 135 1.1 1.2 1.22 1.28 mJ mJ ns nC Max Unit nF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 250A IS = - 250A VR = 66V diS/dt = 200A/µs Tj = 25°C Tj = 25°C 270 5.8 Min Typ Max 278 207 1.3 5 Unit A V V/ns ns µC January, 2010 2-6 APTM10DUM05TG– Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM10DUM05TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) Drain to Source ON Resistance 1.1 VGS=10V 1 0.9 0.8 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) VGS=20V 25 50 75 100 125 150 January, 2010 4-6 APTM10DUM05TG– Rev 2 TC, Case Temperature (°C) www.microsemi.com APTM10DUM05TG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 125A 10000 1000 limited by RDSon 100µs 100 Single pulse TJ=150°C TC=25°C 1 1ms 10ms 10 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 January, 2010 VDS=50V VDS=80V ID=250A TJ=25°C VDS=20V Ciss 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5-6 APTM10DUM05TG– Rev 2 APTM10DUM05TG Delay Times vs Current 350 300 td(on) and td(off) (ns) VDS=66V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 250 200 tr and tf (ns) VDS=66V RG=2.5Ω TJ=125°C L=100µH tr 250 200 150 100 50 0 0 td(off) 150 100 50 0 tf td(on) 100 200 300 ID, Drain Current (A) Switching Energy vs Current 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=66V ID=200A TJ=125°C L=100µH 3 2.5 Eon and Eoff (mJ) 2 1.5 1 0.5 0 0 100 200 300 400 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 100 80 60 40 20 0 50 100 150 200 250 ID, Drain Current (A) VDS=66V D=50% RG=2.5Ω TJ=125°C TC=75°C Hard switching ZCS VDS=66V RG=2.5Ω TJ=125°C L=100µH Eoff 4 3 2 1 0 0 Eoff Eon Eon Eoff 5 10 15 20 25 30 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Frequency (kHz) 100 TJ=25°C ZVS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 January, 2010 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DUM05TG– Rev 2