APTM120A20DG

APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Applicatio n • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G1 S1 OUT G2 S2 0/VBUS G1 S1 VBUS 0/VBUS OUT S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120A20DG Rev 1 July, 2006 Tc = 25°C Max ratings 1200 50 37 200 ±30 240 1250 12 30 1300 Unit V A V mΩ W A APTM120A20DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 25A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 200 3 Max 1.5 6 240 5 ±450 Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 50A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A R G =0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Ω Min Typ 15.2 2.2 0.42 600 84 390 10 10 68 36 2.79 0.6 5.6 0.81 Max Unit nF nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Test Conditions VR=1200V IF = 120A IF = 240A IF = 120A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C T c = 70°C Min 1200 Typ Max 250 600 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage 120 2 2.3 1.8 400 470 2.4 8 2.5 V Qrr Reverse Recovery Charge µC www.microsemi.com 2–6 APTM120A20DG Rev 1 July, 2006 trr Reverse Recovery Time IF = 120A VR = 800V di/dt = 400A/µs ns APTM120A20DG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.46 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 120 90 6V 60 5.5V 30 5V 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 25A 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 30 60 90 120 25 50 75 100 125 150 July, 2006 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–6 APTM120A20DG Rev 1 APTM120A20DG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=25A 1000 100µs 100 limited by RDS on 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=50A TJ=25°C V DS =240V VDS=600V VDS=960V 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120A20DG Rev 1 APTM120A20DG Delay Times vs Current 80 td(on) and td(off) (ns) t d(off) 50 tf Rise and Fall times vs Current 60 V DS =800V RG =0.8Ω T J=125°C L=100µH tr and tf (ns) 40 25 V DS =800V RG =0.8Ω T J=125°C L=100µH tr 20 t d(on) 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) Switching Energy vs Current 50 70 90 I D, Drain Current (A) 110 0 Switching Energy vs Gate Resistance 9 12 Switching Energy (mJ) 9 6 3 0 10 Switching Energy (mJ) VDS=800V RG=0.8Ω TJ=125°C L=100µH E on Eon 6 VDS=800V ID=50A T J=125°C L=100µH Eoff 3 Eoff 0 30 50 70 90 110 0 1 2 3 4 5 6 ID, Drain Current (A) Operating Frequency vs Drain Current 200 175 V DS =800V D=50% RG =0.8Ω T J=125°C T C=75°C ZCS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 T J=150°C Frequency (kHz) 150 125 100 75 50 25 0 10 Hard switching 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 20 30 40 ID, Drain Current (A) 50 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120A20DG Rev 1 M icrosemi reserves the right to change, without notice, the specifications and information contained herein