APTM120DA15G

APTM120DA15G Boost chopper MOSFET Power Module VBUS CR1 VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Applicatio n • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS • • • VBUS 0/VBUS O UT Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120DA15G– Rev 1 July, 2006 Tc = 25°C Max ratings 1200 60 45 240 ±30 175 1250 22 50 3000 Unit V A V mΩ W A APTM120DA15G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 150 3 Max 500 3000 175 5 ±250 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 60A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2 Ω Min Typ 20.6 3.08 0.52 748 96 480 20 15 160 45 3.96 2.74 6.26 3.43 Max Unit nF nC ns mJ mJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 250 750 Unit V µA A IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt = 200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 2 2.3 1.8 400 470 1200 4000 2.5 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM120DA15G– Rev 1 July, 2006 trr Reverse Recovery Time ns APTM120DA15G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.9 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 160 120 80 40 0 0 5 10 15 20 7V 6.5V 240 200 160 120 80 40 0 TJ=25°C T J=125°C TJ=-55°C 6V 5.5V 5V 25 30 0 1 2 3 4 5 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 30A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150 July, 2006 4–6 APTM120DA15G– Rev 1 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V V GS=20V 40 80 120 160 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM120DA15G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 Coss 14 12 10 8 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=30A 1000 100µs 100 limited by RDS on 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=60A TJ=25°C V DS=240V VDS=600V V DS =960V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120DA15G– Rev 1 APTM120DA15G Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG=1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=800V RG=1.2Ω T J=125°C L=100µH t d(off) tf 90 60 30 0 20 tr and tf (ns) 120 40 tr 20 t d(on) 0 40 60 80 100 120 140 20 40 I D, Drain Current (A) Switching Energy vs Current 60 80 100 120 I D, Drain Current (A) 140 Switching Energy vs Gate Resistance 12 Switching Energy (mJ) 10 8 6 4 2 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current 14 Switching Energy (mJ) VDS=800V RG=1.2Ω TJ=125°C L=100µH Eon 12 10 8 6 4 V DS=800V ID=60A T J=125°C L=100µH Eoff Eoff Eon Eoff 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 200 Frequency (kHz) 150 100 50 0 5 15 25 35 45 ID, Drain Current (A) 55 V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C ZCS ZVS IDR, Reverse Drain Current (A) 250 1000 100 T J=150°C T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120DA15G– Rev 1 M icrosemi reserves the right to change, without notice, the specifications and information contained herein