APTM120DA30T1G
Boost chopper MOSFET Power Module
5 6 11
VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C
Application
CR1 3 4
• • •
NTC
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
Features • Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Q2 9 10 1 2
12
• • • Benefits • • • • • •
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 1200 31 23 195 ±30 360 657 25 Unit V A V mΩ W A
December, 2007 1–5 APTM120DA30T1G – Rev 0
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120DA30T1G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 25A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 100 500 360 5 ±100 Unit µA mΩ V nA
3
300 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 25A Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 25A RG = 2.2Ω Min Typ 14560 1340 172 560 90 265 100 60 315 90 ns nC Max Unit pF
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V
di/dt =200A/µs
Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C
Min 1200
Typ
Max 100 500
Unit V µA A
Reverse Recovery Time Reverse Recovery Charge
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
60 2.5 3 1.8 265 350 560 2890
3 V
ns nC
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode
Min
Typ
Max 0.19 0.9 150 125 100 4.7 80
Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=25A
30
20
TJ=25°C
10
0 0 1 2 3 4 5 6 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000
VDS=600V
VGS, Gate to Source Voltage
12 C, Capacitance (pF) 10 8 6 4 2 0 0 100 200 300 400 500 600
VDS=960V ID=25A TJ=25°C VDS=240V
Ciss
10000
1000
Coss
100
Crss
10 0 50 100 150 200
December, 2007 4–5 APTM120DA30T1G – Rev 0
Gate Charge (nC)
VDS, Drain to Source Voltage (V)
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APTM120DA30T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (°C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 150 IF, Forward Current (A) 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 6 5 4 3 2 1 0
30 A TJ=125°C VR=800V
Trr vs. Current Rate of Charge
400
TJ=125°C VR=800V
300
120 A
TJ=125°C
200
60 A
TJ=25°C
100 0 0 200 400 600
30 A
800 1000 1200
-diF/dt (A/µs) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
7
50 40 30 20 10 0 0 200 400 600 800 1000 1200
-diF/dt (A/µs)
TJ=125°C VR=800V 120 A 60 A 30 A
120 A
60 A
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage 400
Max. Average Forward Current vs. Case Temp. 100 80 IF(AV) (A) 60 40 20 0
Duty Cycle = 0.5 TJ=175°C
C, Capacitance (pF)
300
100
0 1 10 100 VR, Reverse Voltage (V) 1000
25
50
75
100
125
150
175
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM120DA30T1G – Rev 0
Case Temperature (ºC)
December, 2007
200