APTM120DA56T1G

APTM120DA56T1G Boost chopper MOSFET Power Module 5 6 11 VDSS = 1200V RDSon = 560mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 3 4 NTC Features • Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration Q2 9 10 1 2 12 • • • Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 1200 18 13 104 ±30 672 390 14 Unit V A V mΩ W A December, 2007 1–5 APTM120DA56T1G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM120DA56T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 100 500 672 5 ±100 Unit µA mΩ V nA 3 560 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2Ω Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Min 1200 Typ Max 100 500 Unit V µA A Reverse Recovery Time Reverse Recovery Charge Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 30 2.6 3.2 1.8 300 380 360 1700 3.1 V ns nC Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode Min Typ Max 0.32 1.2 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 VGS=10V ID=14A 4 0 0 1 2 3 4 5 6 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 VDS=600V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 C, Capacitance (pF) Ciss 10 8 6 4 2 0 0 ID=14A TJ=25°C VDS=240V 1000 Coss VDS=960V 100 Crss 10 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 December, 2007 4–5 APTM120DA56T1G – Rev 0 VDS, Drain to Source Voltage (V) www.microsemi.com APTM120DA56T1G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 80 IF, Forward Current (A) TJ=125°C Trr vs. Current Rate of Charge 500 400 300 45 A TJ=125°C VR=800V 60 40 200 100 0 0 200 400 600 30 A 15 A 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge TJ=125°C VR=800V 800 1000 1200 -diF/dt (A/µs) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) 4 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) 45 A TJ=125°C VR=800V 30 A 15 A 45 A 3 30 A 2 15 A 1 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 160 120 80 40 0 1 10 100 VR, Reverse Voltage (V) 1000 Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (ºC) Duty Cycle = 0.5 TJ=175°C C, Capacitance (pF) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM120DA56T1G – Rev 0 December, 2007