APTM120DDA57T3G

APTM120DDA57T3G Dual Boost chopper MOSFET Power Module 13 14 VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant CR1 22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120DDA57T3G– Rev 1 July, 2006 Max ratings 1200 17 13 68 ±30 684 390 22 50 3000 Unit V A V mΩ W A APTM120DDA57T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 570 3 Max 250 1000 684 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω Min Typ 5155 770 130 187 24 120 20 15 160 45 990 685 1565 857 Max Unit pF nC ns µJ µJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C IF = 25A VR = 600V di/dt =1000A/µs Min 1200 Typ Max 250 500 Unit V µA A V ns µC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V IF = 25A VGE = 0 V 25 2.1 1.9 95 190 2.3 4.5 Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com 2–6 APTM120DDA57T3G– Rev 1 July, 2006 APTM120DDA57T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 40 30 20 10 0 0 5 10 15 20 7V 6.5V 60 50 40 30 20 10 0 TJ=25°C T J=125°C T J=-55°C 6V 5.5V 5V 25 30 0 1 2 3 4 5 6 7 8 9 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 8.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 16 12 8 4 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 V GS=10V VGS=20V 10 20 30 40 25 50 75 100 125 150 APTM120DDA57T3G– Rev 1 July, 2006 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–6 APTM120DDA57T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC) APTM120DDA57T3G– Rev 1 July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=8.5A 100 100µs limited by RDSon 1ms 10ms 10 1 Single pulse TJ =150°C TC=25°C 1 1200 10 100 1000 VDS , Drain to Source Voltage (V) 0 Gate Charge vs Gate to Source Voltage I D=17A TJ=25°C V DS=240V VDS=600V V DS =960V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120DDA57T3G Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 100 80 60 40 20 0 5 10 15 20 25 30 35 I D, Drain Current (A) Switching Energy vs Current 0 5 10 15 20 25 I D, Drain Current (A) 30 35 V DS=800V RG =5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=800V RG=5Ω TJ=125°C L=100µH t d(off) 60 tf tr and tf (ns) 120 40 tr 20 td(on) Switching Energy vs Gate Resistance 4 VDS=800V ID=17A TJ=125°C L=100µH 3 Switching Energy (mJ) Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 5 V DS=800V RG=5Ω T J=125°C L=100µH Eon Eoff Eoff 3 2 1 Eoff Eon 0 10 15 20 25 30 35 0 5 10 15 20 25 30 35 I D, Drain Current (A) Operating Frequency vs Drain Current 200 175 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 4 6 VDS=800V D=50% RG=5Ω T J=125°C T C=75°C ZCS ZVS 100 T J=150°C 10 T J=25°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM120DDA57T3G– Rev 1 July, 2006 8 10 12 14 ID, Drain Current (A) 16 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6