APTM120DU29TG

APTM120DU29TG Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G2 S1 S NTC1 S2 NTC2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 1200 34 25 136 ±30 348 780 22 50 3000 Unit V A V mΩ W A mJ G2 S2 D2 D1 S D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120DU29TG– Rev1 July, 2006 APTM120DU29TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 17A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 290 3 Max 350 1500 348 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Min Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 34A IS = - 34A ; VR = 600V diS/dt = 200A/µs 1291 58 Max 34 25 1.3 10 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 34A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C July, 2006 www.microsemi.com 2–6 APTM120DU29TG– Rev1 APTM120DU29TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 80 60 40 20 0 0 5 10 15 20 7V 6.5V 120 100 80 60 40 20 0 TJ=25°C T J=125°C TJ=-55°C 6V 5.5V 5V 25 30 0 1 2 3 4 5 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 17A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 20 40 60 80 25 50 75 100 125 150 July, 2006 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–6 APTM120DU29TG– Rev1 APTM120DU29TG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=17A 1000 100µs 100 limited by RDS on 1ms 10 Single pulse TJ =150°C TC=25°C 1 10ms 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=34A TJ=25°C V DS=240V VDS=600V V DS =960V www.microsemi.com 5–6 APTM120DU29TG– Rev1 APTM120DU29TG Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG =2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 V DS =800V RG =2.5Ω T J=125°C L=100µH t d(off) tf 90 60 30 0 10 tr and tf (ns) 120 40 tr 20 td(on) 0 20 30 40 50 60 70 10 20 I D, Drain Current (A) Switching Energy vs Current 30 40 50 ID, Drain Current (A) 60 70 Switching Energy vs Gate Resistance 7 VDS=800V ID=34A TJ=125°C L=100µH 6 Switching Energy (mJ) 5 4 3 2 1 0 10 Switching Energy (mJ) VDS=800V RG=2.5Ω TJ=125°C L=100µH Eon 6 5 4 3 2 1 Eoff Eoff Eon Eoff 20 30 40 50 60 I D, Drain Current (A) 70 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Operating Frequency vs Drain Current 200 175 ZCS IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 8 12 16 20 24 28 ID, Drain Current (A) 32 VDS=800V D=50% RG=2.5Ω T J=125°C T C=75°C ZVS 100 T J=150°C T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120DU29TG– Rev1