APTM120H57FTG

APTM120H57FTG Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 S1 Q2 O UT1 O UT2 Q4 G3 S3 G2 S2 NT C1 0/VBUS NT C2 G4 S4 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 1200 17 13 68 ±30 684 390 22 50 3000 Unit V A V mΩ W A mJ G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120H57FTG– Rev 1 July, 2006 APTM120H57FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 570 3 Max 250 1000 684 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω Min Typ 5155 770 130 187 24 120 20 15 160 45 990 685 1565 857 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 17A IS = - 17A VR = 600V diS/dt = 100A/µs IS = - 17A VR = 600V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 2 7 Max 17 13 1.3 18 320 650 Unit A V V/ns ns µC July, 2006 2–6 APTM120H57FTG– Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM120H57FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 40 30 20 10 0 0 5 10 15 20 7V 6.5V 60 50 40 30 20 10 0 TJ=25°C T J=125°C T J=-55°C 6V 5.5V 5V 25 30 0 1 2 3 4 5 6 7 8 9 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 8.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 16 12 8 4 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 V GS=10V VGS=20V 10 20 30 40 25 50 75 100 125 150 July, 2006 4–6 APTM120H57FTG– Rev 1 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM120H57FTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=8.5A 100 100µs limited by RDSon 1ms 10ms 10 1 Single pulse TJ =150°C TC=25°C 1 1200 10 100 1000 VDS , Drain to Source Voltage (V) 0 Gate Charge vs Gate to Source Voltage I D=17A TJ=25°C V DS=240V VDS=600V V DS =960V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120H57FTG– Rev 1 APTM120H57FTG Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 100 80 60 40 20 0 5 10 15 20 25 30 35 I D, Drain Current (A) Switching Energy vs Current 0 5 10 15 20 25 I D, Drain Current (A) 30 35 V DS=800V RG =5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=800V RG=5Ω TJ=125°C L=100µH t d(off) 60 tf tr and tf (ns) 120 40 tr 20 td(on) Switching Energy vs Gate Resistance 4 VDS=800V ID=17A TJ=125°C L=100µH 3 Switching Energy (mJ) Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 5 V DS=800V RG=5Ω T J=125°C L=100µH Eon Eoff Eoff 3 2 1 Eoff Eon 0 10 15 20 25 30 35 0 5 10 15 20 25 30 35 I D, Drain Current (A) Operating Frequency vs Drain Current 200 175 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 4 6 VDS=800V D=50% RG=5Ω T J=125°C T C=75°C ZCS ZVS 100 T J=150°C 10 T J=25°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 6–6 APTM120H57FTG– Rev 1 8 10 12 14 ID, Drain Current (A) 16 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com