APTM120U10DAG_08

APTM120U10DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120U100DAG Rev 2 June, 2008 Tc = 25°C APTM120U10DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V 100 3 Max 1 3 120 5 ±400 Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω Min Typ 28.9 4.4 0.8 1100 128 716 20 17 245 62 5 4.6 9.2 5.6 mJ mJ ns nC Max Unit nF Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 180A IF = 360A IF = 180A IF = 180A VR = 800V di/dt = 800A/µs Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 1500 2500 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 180 2 2.3 1.8 370 500 3.9 20.7 2.5 V Qrr Reverse Recovery Charge µC www.microsemi.com 2–6 APTM120U100DAG Rev 2 June, 2008 trr Reverse Recovery Time ns APTM120U10DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.038 0.22 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 5V RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 40 80 120 160 200 240 25 50 75 100 125 150 June, 2008 4–6 APTM120U100DAG Rev 2 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM120U10DAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) limited by RDSon 100µs VGS=10V ID=58A TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=116A TJ=25°C VDS=600V VDS=960V VDS=240V Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 300 600 900 1200 1500 Gate Charge (nC) June, 2008 www.microsemi.com 5–6 APTM120U100DAG Rev 2 APTM120U10DAG Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 30 60 90 120 150 180 ID, Drain Current (A) Switching Energy vs Current 16 Switching Energy (mJ) Switching Energy (mJ) 12 8 4 0 30 60 90 120 150 180 ID, Drain Current (A) Operating Frequency vs Drain Current 150 Frequency (kHz) 125 100 75 50 25 0 30 50 70 90 ID, Drain Current (A) 110 Hard switching VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C VDS=800V RG=1.2Ω TJ=125°C L=100µH VDS=800V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current 100 td(off) 80 VDS=800V RG=1.2Ω TJ=125°C L=100µH tf tr and tf (ns) 60 40 20 0 30 60 90 120 150 ID, Drain Current (A) 180 tr td(on) Switching Energy vs Gate Resistance 24 VDS=800V ID=116A TJ=125°C L=100µH Eon Eoff 20 16 12 8 4 0 Eoff Eon Eoff 2 4 6 8 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 175 ZCS 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) June, 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120U100DAG Rev 2