APTM120UM70FAG

APTM120UM70FAG Single switch MOSFET Power Module SK S D VDSS = 1200V RDSon = 70mΩ typ @ Tj = 25°C ID = 171A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120UM70FAG Rev 1 July, 2006 Max ratings 1200 171 126 684 ±30 80 5000 24 50 3200 Unit V A V mΩ W A APTM120UM70FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0 V 70 3 Max 1.5 6 80 5 ±600 Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 171A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 171A R G =0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8 Ω Min Typ 43.5 6.6 1.2 1650 192 1074 20 17 245 62 7.6 6.9 13.8 8.5 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 171A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 12 54 IS = - 171A VR = 600V diS/dt = 600A/µs Max 171 126 1.3 18 375 860 Unit A V V/ns ns µC July, 2006 2–6 APTM120UM70FAG Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 171A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM120UM70FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 5V RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V V GS=20V 60 120 180 240 300 360 25 50 75 100 125 150 July, 2006 4–6 APTM120UM70FAG Rev 1 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM120UM70FAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 420 840 1260 1680 2100 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=85.5A 1000 limited by RDS on 100µs 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) 1 Gate Charge vs Gate to Source Voltage ID=171A TJ=25°C VDS=240V VDS=600V VDS=960V 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120UM70FAG Rev 1 APTM120UM70FAG Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current 24 36 V DS =800V RG =0.8Ω T J=125°C L=100µH VDS=800V RG=0.8Ω T J=125°C L=100µH Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=0.8Ω T J=125°C L=100µH tf tr and tf (ns) 60 40 20 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) tr td(on) Switching Energy vs Gate Resistance V DS=800V ID=171A T J=125°C L=100µH Switching Energy (mJ) 20 16 12 8 4 0 60 Switching Energy (mJ) Eon Eoff 30 24 18 12 6 Eoff Eon Eoff 90 120 150 180 210 240 270 ID, Drain Current (A) 0 1 2 3 4 5 6 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage O perating Frequency vs Drain Current 150 ZVS Hard switching VDS=800V D=50% RG=0.8Ω T J=125°C T C=75°C ZCS IDR, Reverse Drain Current (A) 175 1000 T J=150°C Frequency (kHz) 125 100 75 50 25 0 40 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 60 80 100 120 140 ID, Drain Current (A) 160 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120UM70FAG Rev 1