APTM120UM95FAG

APTM120UM95FAG Single Switch MOSFET Power Module SK S D VDSS = 1200V RDSon = 95mΩ typ @ Tj = 25°C ID = 103A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120UM95FAG Rev 1 July, 2006 Tc = 25°C Max ratings 1200 103 77 412 ±30 114 2272 25 50 3000 Unit V A V mΩ W A APTM120UM95FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 51.5A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0 V 95 3 Max 0.6 3 114 5 ±500 Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 103A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 103A R G =0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 103A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 103A, R G = 0.8 Ω Min Typ 30.9 4.6 0.78 1122 144 720 20 15 160 45 5.9 4.1 9.4 5.14 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 103A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 12 42 IS = - 103A VR = 600V diS/dt = 600A/µs Max 103 77 1.3 18 320 650 Unit A V V/ns ns µC July, 2006 2–6 APTM120UM95FAG Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 103A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM120UM95FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 240 180 120 60 0 0 5 10 15 20 7V 6.5V 360 300 240 180 120 60 0 TJ=25°C TJ=125°C 0 1 2 3 4 5 6 TJ=-55°C 7 8 9 6V 5.5V 5V 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 51.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 100 80 60 40 20 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 60 120 180 240 25 50 75 100 125 150 July, 2006 4–6 APTM120UM95FAG Rev 1 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM120UM95FAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 240 480 720 960 1200 1440 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=51.5A 1000 100µs limited by RDS on 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) 1 Gate Charge vs Gate to Source Voltage ID=103A TJ=25°C VDS=240V V DS =600V VDS=960V 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM120UM95FAG Rev 1 APTM120UM95FAG Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG=0.8Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=800V RG=0.8Ω T J=125°C L=100µH t d(off) tf 90 60 30 0 30 tr and tf (ns) 120 40 tr 20 td(on) 0 60 90 120 150 180 210 30 60 I D, Drain Current (A) Switching Energy vs Current 90 120 150 180 I D, Drain Current (A) 210 Switching Energy vs Gate Resistance 18 Switching Energy (mJ) Switching Energy (mJ) 15 12 9 6 3 0 30 60 90 120 150 180 210 ID, Drain Current (A) O perating Frequency vs Drain Current VDS=800V RG=0.8Ω TJ=125°C L=100µH 20 Eon 16 12 8 4 0.0 1.2 2.4 3.6 4.8 6.0 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage V DS=800V ID=103A T J=125°C L=100µH Eoff Eoff Eon Eoff 200 Frequency (kHz) ZCS IDR, Reverse Drain Current (A) 250 1000 T J=150°C 100 150 100 50 0 10 25 40 55 70 85 ID, Drain Current (A) 100 V DS=800V D=50% R G=0.8Ω T J=125°C T C=75°C ZVS T J=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120UM95FAG Rev 1