APTM20AM06SG

APTM20AM06SG Phase leg Series & parallel diodes MOSFET Power Module VBUS VDSS = 200V RDSon = 6mΩ typ @ Tj = 25°C ID = 300A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features Q1 G1 OUT S1 • Q2 G2 0/VBUS S2 • • • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G1 S1 VBUS 0/VBUS OUT Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM20AM06SG – Rev 2 Max ratings 200 300 225 1200 ±30 7.2 1250 24 30 1300 Unit V A V mΩ W A mJ July, 2006 APTM20AM06SG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 150A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 6 3 Max 500 2000 7.2 5 ±500 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A R G = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, R G = 0.8 Ω Min Typ 18.5 6.03 0.58 325 144 156 28 56 81 99 1543 1517 2027 1770 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 120 1.1 1.4 0.9 31 60 120 500 1.15 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com 2-6 APTM20AM06SG – Rev 2 July, 2006 APTM20AM06SG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Test Conditions VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 120 1.1 1.4 0.9 31 60 120 500 Min Transistor Series diode Diode parallel 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 150 125 100 5 3.5 280 1.15 V Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 8V T J=125°C TJ=25°C TJ =-55°C 200 6V 0 0 2.5 5 7.5 10 12.5 15 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100 VGS =20V VGS=10V 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 320 I D, DC Drain Current (A) 600 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 4-6 APTM20AM06SG – Rev 2 Normalized to V GS=10V @ 44.5A 200 300 400 500 I D, Drain Current (A) www.microsemi.com APTM20AM06SG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID= 150A 10000 I D, Drain Current (A) 1000 limited by RDSon 100µs 1ms 10ms 100 Single pulse TJ=150°C TC=25°C 10 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=300A 10 TJ=25°C V DS =100V 8 6 4 2 0 0 60 120 180 240 300 360 Gate Charge (nC) July, 2006 VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) www.microsemi.com 5-6 APTM20AM06SG – Rev 2 APTM20AM06SG Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 VDS=133V RG=0.8Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 td(off) t r and tf (ns) 120 100 80 60 40 20 0 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) Switching Energy vs Gate Resistance 6000 Switching Energy (µJ) tr VDS=133V RG=0.8Ω T J=125°C L=100µH tf td(on) 10 100 150 200 250 300 350 400 450 500 I D, Drain Current (A) Switching Energy vs Current 4000 3500 Eon and Eoff (µJ) 3000 2500 2000 1500 1000 500 VDS=133V RG=0.8Ω T J=125°C L=100µH Eon 5000 4000 3000 2000 1000 0 Eoff VDS=133V ID=300A T J=125°C L=100µH Eoff Eon Eoff 2 4 6 8 10 0 100 150 200 250 300 350 400 450 500 I D, Drain Current (A) Operating Frequency vs Drain Current Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 350 Frequency (kHz) 300 250 200 150 100 50 0 30 Hard switching VDS=133V D=50% RG=0.8Ω TJ=125°C TC=75°C ZVS ZCS I DR, Reverse Drain Current (A) 400 1000 TJ=150°C TJ =25°C 100 10 1 60 90 120 150 180 210 240 270 I D, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM20AM06SG – Rev 2