APTM20DHM10G

APTM20DHM10G Asymmetrical - bridge MOSFET Power Module VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4 VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C Applicatio n • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • G4 0/VBUS S4 • • • Benefits OUT1 G1 S1 VBUS 0/VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration S4 G4 OUT2 • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 200 175 131 700 ±30 12 694 89 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DHM10G – Rev 3 July, 2006 APTM20DHM10G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25°C Tj = 125°C 10 3 VGS = 10V, ID = 87.5A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V Max 200 1000 12 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5 Ω Min Typ 13.7 4.36 0.19 224 86 94 28 56 81 99 926 910 1216 1062 Max Unit nF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 200 Typ Max 250 600 Unit V µA A V July, 2006 2–6 APTM20DHM10G – Rev 3 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=200V IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 200 1 1.4 0.9 60 110 400 1680 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC di/dt = 400A/µs www.microsemi.com APTM20DHM10G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.29 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 400 300 200 100 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 I D, Drain Current (A) 240 VGS =20V 300 7.5V 7V 6.5V 6V 5.5V 200 T J=25°C TJ =125°C TJ =-55°C 100 0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 180 I D, DC Drain Current (A) 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 Normalized to V GS=10V @ 87.5A VGS =10V www.microsemi.com 4–6 APTM20DHM10G – Rev 3 APTM20DHM10G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon ON resistance vs Temperature VGS=10V ID= 87.5A 1000 100µs 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C DC line VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25°C V DS =100V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 V DS =160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20DHM10G – Rev 3 APTM20DHM10G Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 50 100 150 200 250 300 I D, Drain Current (A) Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=2.5Ω T J=125°C L=100µH td(off) t r and tf (ns) tf 120 100 80 60 40 20 0 0 tr td(on) 50 100 150 200 250 300 ID, Drain Current (A) Switching Energy vs Gate Resistance 3 Switching Energy (mJ) 2.5 2 1.5 1 Eon VDS=133V ID=150A TJ=125°C L=100µH 2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300 ID, Drain Current (A) VDS=133V RG=2.5Ω TJ=125°C L=100µH Eon Eoff Eon and Eoff ( mJ) Eoff Eon 0 5 10 15 20 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Hard Switching ZVS V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 350 100 TJ =150°C TJ =25°C ZCS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved www.microsemi.com 6–6 APTM20DHM10G – Rev 3