APTM20DHM16TG

APTM20DHM16TG Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 200V RDSon = 16mΩ typ @ Tj = 25°C ID = 104A @ Tc = 25°C Applicatio n • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives G1 S1 O UT1 OUT2 Q4 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2 NTC1 • • • • VBUS SENSE G4 S4 OUT2 Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 200 104 77 416 ±30 19 390 104 50 3000 Unit V A V mΩ W A mJ July, 2006 1–6 APTM20DHM16TG – Rev 3 VBUS 0/VBUS OUT1 S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM20DHM16TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25°C Tj = 125°C 16 3 VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V Max 250 1000 19 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Ω Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/µs Min 200 Tj = 25°C Tj = 125°C T c = 80°C Typ Max 250 500 Unit V µA A 100 1 1.4 0.9 110 200 840 60 1.1 V July, 2006 2–6 APTM20DHM16TG – Rev 3 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTM20DHM16TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 10V 9V 8.5V 8V 7.5V 7V 6.5V 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 52A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 120 100 80 60 40 20 0 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 4–6 APTM20DHM16TG – Rev 3 TC, Case Temperature (°C) www.microsemi.com APTM20DHM16TG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 52A 100 100µs 10 1ms Single pulse TJ=150°C TC=25°C 1 10ms 100ms 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25°C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 VDS=100V 10000 Ciss Coss VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20DHM16TG – Rev 3 APTM20DHM16TG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) VDS=133V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 V DS=133V R G=5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) 120 100 80 60 40 20 0 0 tf t d(on) tr 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 Eoff 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 I D, Drain Current (A) VDS=133V D=50% RG=5Ω TJ=125°C TC=75°C ZCS ZVS VDS=133V RG=5Ω T J=125°C L=100µH Switching Energy vs Gate Resistance 3 VDS=133V ID=104A T J=125°C L=100µH Eoff Eon Eon and Eoff (mJ) 2.5 2 1.5 1 0.5 0 Eoff Eon 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150°C 100 TJ =25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20DHM16TG – Rev 3 M icrosemi reserves the right to change, without notice, the specifications and information contained herein