APTM20DUM08TG
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C
Applicatio n • • •
Q2
D1 Q1
D2
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
Features
G2
G1
•
S1 S NTC1
S2
NTC2
• • • •
G2 S2
Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Benefits
D2
D1
S
D2
S1 G1
S2 G2
NTC2 NTC1
• • • • • •
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V mΩ W A mJ
July, 2006 1–6 APTM20DUM08TG – Rev 4
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTM20DUM08TG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25°C Tj = 125°C 8 3
VGS = 10V, ID = 104A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V
Max 375 1500 10 5 ±150
Unit µA mΩ V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 Ω
Min
Typ 14.4 4.66 0.29 280 106 134 32 64 88 116 1698 1858 1872 1972
Max
Unit nF
nC
ns
µJ
µJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 208A IS = - 208A, VR = 133V diS/dt = 200A/µs 360 13.4
Max 208 155 1.3 5
Unit A V V/ns ns µC
July, 2006 2–6 APTM20DUM08TG – Rev 4
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
www.microsemi.com
APTM20DUM08TG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
1200 ID, Drain Current (A) 1000 800 600 400 200 0 0 4 8 12
16
20
24
28
0
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 104A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 250 200 150 100 50 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A)
25
50
75
100
125
150
July, 2006 4–6 APTM20DUM08TG – Rev 4
TC, Case Temperature (°C)
www.microsemi.com
APTM20DUM08TG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area
VGS=10V ID= 104A
1000
limited by RDSon
100µs
100
1ms
10
Single pulse TJ=150°C TC=25°C 1
10ms 100ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25°C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
July, 2006
VDS=100V
10000
Coss
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
www.microsemi.com
5–6
APTM20DUM08TG – Rev 4
APTM20DUM08TG
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 I D, Drain Current (A)
VDS=133V RG=2.5Ω T J=125°C L=100µH
Rise and Fall times vs Current 160 140
V DS=133V R G=2.5Ω T J=125°C L=100µH
t d(off) tr and tf ( ns)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
50
100 150 200 250 300 350 ID, Drain Current (A)
Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 Eoff 1 100 150 200 250 300 350 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 25 50 75 100 125 150 175 200 I D, Drain Current (A)
V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZVS ZCS VDS=133V RG=2.5Ω TJ=125°C L=100µH
Switching Energy vs Gate Resistance 6
VDS=133V ID=208A TJ=125°C L=100µH
Eoff Eon
5 4 3 2
Eon and Eoff ( mJ)
Eoff
Eon
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150°C 100 TJ =25°C 10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
VSD, Source to Drain Voltage (V)
M icrosemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–6
APTM20DUM08TG – Rev 4