APTM20HM20FTG
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 200V RDSon = 20mΩ typ @ Tj = 25°C ID = 89A @ Tc = 25°C
Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
G1 S1 Q2 OUT1 OUT2 Q4
G3 S3
G2 S2 NT C1 0/VBUS NT C2
G4 S4
Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 200 89 66 356 ±30 24 357 89 50 2500 Unit V A V mΩ W A mJ
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM20HM20FTG – Rev 2
July, 2006
Tc = 25°C
APTM20HM20FTG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA Min 200
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Max 250 1000 24 5 ±100
Unit V µA mΩ V nA
Tj = 25°C Tj = 125°C 20 3
VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 75A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Ω
Min
Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531
Max
Unit pF
nC
ns
µJ
µJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25°C Tc = 80°C
Min
Typ
VGS = 0 V, IS = - 75A IS = - 75A VR = 133V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Max 89 66 1.3 8 220 420
Unit A V V/ns ns µC
July, 2006 2–6 APTM20HM20FTG – Rev 2
1.07 2.9
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 75A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
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APTM20HM20FTG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 I D, Drain Current (A) 120
VGS =20V
7.5V 7V 6.5V 6V 5.5V
T J=25°C TJ =125°C TJ =-55°C
2
3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to V GS=10V @ 44.5A
80 60 40 20 0 25
July, 2006 4–6 APTM20HM20FTG – Rev 2
VGS =10V
50 75 100 125 TC, Case Temperature (°C)
150
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APTM20HM20FTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss Coss
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID= 44.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area
1000 I D, Drain Current (A)
100
limited by RDSon
100µs
1ms
10
Single pulse T J=150°C T C=25°C
10ms
DC line
1
1
10 100 1000 VDS , Drain to Source Voltage (V)
10000
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25°C VDS=100V
8 6 4 2 0 0 25 50 75
VDS=160V
1000
Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
100
125
Gate Charge (nC)
July, 2006
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APTM20HM20FTG – Rev 2
APTM20HM20FTG
Delay Times vs Current Rise and Fall times vs Current
90 80
td(on) and td(off) (ns)
160 140 td(off)
t r and tf (ns)
VDS=133V RG=5Ω TJ=125°C L=100µH
70 60 50 40 30 20 10 0 25 50 75 100
120 100 80 60 40 20 0 150 0
VDS=133V RG=5Ω T J=125°C L=100µH
tf
tr
td(on)
125
25
50
75
100
125
150
ID, Drain Current (A) Switching Energy vs Current
ID, Drain Current (A)
1200 1000
Eon and Eoff (µJ)
Switching Energy vs Gate Resistance 1500 Switching Energy (µJ) 1250 1000 750 500 250 Eoff
VDS=133V ID=75A T J=125°C L=100µH
800 600 400 200 0 0
VDS=133V RG=5Ω T J=125°C L=100µH
Eon Eoff
Eoff Eon
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
I D, Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80
ZCS Hard switching
VDS=133V D=50% RG=5Ω T J=125°C T C=75°C
ZVS
IDR, Reverse Drain Current (A)
350
100
T J=150°C
10
TJ=25°C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM20HM20FTG – Rev 2
M icrosemi reserves the right to change, without notice, the specifications and information contained herein