APTM20SKM05G

APTM20SKM05G Buck chopper MOSFET Power Module VBUS Q1 VDSS = 200V RDSon = 5mΩ typ @ Tj = 25°C ID = 317A @ Tc = 25°C Applicatio n • • AC and DC motor control Switched Mode Power Supplies G1 OUT S1 CR2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration 0/VBUS • • • G1 S1 VBUS 0/VBUS O UT Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 200 317 237 1268 ±30 6 1136 89 50 2500 Unit V A V mΩ W A mJ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20SKM05G – Rev 3 July, 2006 Tc = 25°C APTM20SKM05G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25°C Tj = 125°C Typ VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 5 3 Max 400 2000 6 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2 Ω Min Typ 27.4 8.72 0.38 448 172 188 28 56 81 99 1852 1820 2432 2124 Max Unit nF nC ns µJ µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DCForward Current Diode Forward Voltage Test Conditions VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 1000 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C IF = 240A VR = 133V di/dt = 800A/µs 31 60 240 1000 Tj = 125°C Tj = 25°C Tj = 125°C ns nC www.microsemi.com 2–6 APTM20SKM05G – Rev 3 July, 2006 IF = 240A IF = 480A IF = 240A Tj = 125°C 240 1.1 1.4 0.9 1.15 V APTM20SKM05G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.23 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 800 600 400 200 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 VGS=10V 600 7.5V 7V 6.5V 6V 5.5V 400 T J=25°C TJ =125°C TJ =-55°C 200 0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 320 I D, DC Drain Current (A) 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 4–6 APTM20SKM05G – Rev 3 Normalized to V GS=10V @ 158.5A 1.05 1 0.95 0.9 0 100 200 300 I D, Drain Current (A) 400 VGS=20V www.microsemi.com APTM20SKM05G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID= 158.5A 10000 1000 limited by RDSon 100µs 1ms 10ms 100 Single pulse TJ=150°C TC=25°C 1 10 DC line 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V I D=300A 10 TJ=25°C VDS=100V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 V DS =160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20SKM05G – Rev 3 APTM20SKM05G Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 150 250 350 450 550 I D, Drain Current (A) Switching Energy vs Current VDS=133V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 td(off) t r and tf (ns) 120 100 80 60 40 20 0 50 V DS=133V RG=1.2Ω T J=125°C L=100µH tf tr td(on) 150 250 350 450 550 ID, Drain Current (A) Switching Energy vs Gate Resistance 6 Switching Energy (mJ) 5 4 3 2 1 0 50 150 250 350 450 550 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=133V RG=1.2Ω T J=125°C L=100µH Eon Eoff 5.5 5 4.5 4 3.5 3 2.5 2 0 Eon and Eoff (mJ) V DS=133V ID=300A T J=125°C L=100µH Eoff Eon Eoff 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 300 Frequency (kHz) I DR, Reverse Drain Current (A) 350 TJ=150°C 100 250 200 150 100 50 0 30 ZVS V DS=133V D=50% R G=1.2Ω T J=125°C T C=75°C ZCS 10 TJ =25°C Hard Switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 70 110 150 190 230 270 I D, Drain Current (A) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20SKM05G – Rev 3