APTM20UM04SAG

APTM20UM04SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 200V RDSon = 4mΩ typ @ Tj = 25°C ID = 417A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S Q1 G S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20UM04SAG – Rev 1 Max ratings 200 417 310 1670 ±30 5 1560 100 50 3000 Unit V A V mΩ W A mJ July, 2006 APTM20UM04SAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 208.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V VGS = 0V,VDS = 200V Typ 4 3 Max 500 2000 5 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 417A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 417A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2 Ω Min Typ 28.8 9.32 0.58 560 212 268 32 64 88 116 3396 3716 3744 3944 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 360A IF = 720A IF = 360A IF = 360A VR = 133V di/dt = 1000A/µs Min 200 Tj = 25°C Tj = 125°C T c = 85°C Typ Max 1000 1250 Unit V µA A VR=200V trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 31 60 360 1500 ns nC www.microsemi.com 2–6 APTM20UM04SAG – Rev 1 July, 2006 Tj = 125°C 360 1.1 1.4 0.9 1.15 V APTM20UM04SAG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 360A IF = 720A IF = 360A IF = 360A VR = 133V di/dt = 1000A/µs Min 200 Tj = 25°C Tj = 125°C T c = 85°C Typ Max 1000 1250 Unit V µA A VR=200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Transistor Series Diode Parallel Diode 2500 -40 -40 -40 3 2 360 1.1 1.4 0.9 31 60 360 1500 Typ 1.15 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Max 0.08 0.12 0.12 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, Isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 1000 800 600 400 200 0 TJ=25°C TJ=125°C TJ=-55°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 208.5A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 July, 2006 4–6 APTM20UM04SAG – Rev 1 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 100 200 300 400 500 600 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com APTM20UM04SAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 10000 VGS=10V ID= 208.5A 1000 limited by RDSon 100µs 1ms 100 Single pulse TJ=150°C TC=25°C 1 10ms 100ms 10 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=417A V DS=40V 12 TJ =25°C 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 VDS=100V VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20UM04SAG – Rev 1 APTM20UM04SAG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 100 200 300 400 500 600 700 I D, Drain Current (A) Switching Energy vs Current 8 Switching Energy (mJ) 6 4 2 Eoff 0 0 100 200 300 400 500 600 700 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 50 100 150 200 250 300 350 400 I D, Drain Current (A) V DS=133V D=50% RG=1.2Ω T J=125°C T C=75°C ZCS ZVS VDS=133V RG=1.2Ω TJ=125°C L=100µH VDS=133V RG=1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 t r and tf (ns) V DS=133V R G=1.2Ω T J=125°C L=100µH td(off) 120 100 80 60 40 20 0 0 tf t d(on) tr 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Gate Resistance 14 V DS=133V ID=417A T J=125°C L=100µH Eoff Eon 12 10 8 6 4 2 0 Eon and Eoff ( mJ) Eoff Eon 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ =25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 VSD, Source to Drain Voltage (V) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20UM04SAG – Rev 1