APTM50AM24SCG

APTM50AM24SCG Phase leg Series & SiC parallel diodes VDSS = 500V RDSon = 24mΩ typ @ Tj = 25°C ID = 150A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 • • G1 S1 VBUS 0/VBUS OUT • S2 G2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 150 110 600 ±30 28 1250 24 30 1300 Unit V A V mΩ W A mJ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50AM24SCG – Rev 2 July, 2006 APTM50AM24SCG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V T j = 25°C Tj = 125°C Typ VGS = 10V, ID = 75A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 150A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A R G = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8 Ω 24 3 Max 500 3 28 5 ±500 Max Unit µA mA mΩ V nA Unit nF Dynamic Characteristics Min Typ 19.6 4.2 0.3 434 120 216 10 17 50 41 1.15 1.5 1.97 1.7 nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Test Conditions Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 350 600 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 120 1.1 1.4 0.9 31 60 120 500 1.15 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC July, 2006 2–7 APTM50AM24SCG – Rev 2 www.microsemi.com APTM50AM24SCG SiC Parallel diode ratings and characteristics Symbol VRRM IRM IF VF QC Q Characteristic Maximum Peak Repetitive Reverse Voltage Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Min 600 Typ 400 800 80 1.6 2.0 112 520 400 Max 1600 8000 1.8 2.4 Unit V µA A V nC pF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 80A IF = 80A, VR = 300V di/dt =2000A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Typ Max 0.10 0.46 0.35 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle T J=-55°C 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 120 80 V GS=20V 40 0 60 120 180 240 300 360 25 July, 2006 4–7 APTM50AM24SCG – Rev 2 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTM50AM24SCG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) limited by R DSon ON resistance vs Temperature VGS=10V ID=75A 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100µs 100 limited by RDSon 1ms 10 Single pulse TJ =150°C TC=25°C 1 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–7 APTM50AM24SCG – Rev 2 APTM50AM24SCG Delay Times vs Current 60 50 t d(on) and td(off) (ns) V DS =333V RG =0.8Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=333V RG=0.8Ω TJ=125°C L=100µH 30 20 10 0 30 t r and tf (ns) 40 td(off) 60 tf 40 td(on) 20 tr 0 80 130 180 230 ID, Drain Current (A) 280 30 80 130 180 230 280 I D, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 6 4 2 0 Eon VDS=333V ID=150A TJ=125°C L=100µH Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 0 30 80 130 180 230 280 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=333V D=50% RG=0.8Ω T J=125°C T C=75°C VDS=333V RG=0.8Ω T J=125°C L=100µH Eoff Eoff Eon 0 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 500 Frequency (kHz) 400 300 200 100 0 30 60 Hard switching ZVS IDR, Reverse Drain Current (A) 600 1000 T J=150°C ZCS 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 90 120 150 ID, Drain Current (A) www.microsemi.com 6–7 APTM50AM24SCG – Rev 2 APTM50AM24SCG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 160 I F Forward Current (A) TJ=25°C IR Reverse Current (µA) 1600 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ =125°C TJ =75°C TJ =175°C 120 80 40 0 0 0.5 TJ =75°C TJ=175°C TJ =125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0 July, 2006 7–7 APTM50AM24SCG – Rev 2 1 10 100 VR Reverse Voltage 1000 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com