APTM50AM35FTG

APTM50AM35FTG Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G1 S1 OUT Q2 G2 S2 0/VBUS NTC1 G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50AM35FTG – Rev 2 Max ratings 500 99 74 396 ±30 39 781 51 50 3000 Unit V A V mΩ W A July, 2006 APTM50AM35FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 49.5A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 35 3 Max 200 1000 39 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 99A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, R G = 1 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, R G = 1 Ω Min Typ 14 2.8 0.2 280 80 140 21 38 75 93 2070 1690 3112 2026 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 99A IS = - 99A VR = 333V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 5.2 19.2 Max 99 74 1.3 15 270 540 Unit A V V/ns ns µC July, 2006 2–6 APTM50AM35FTG – Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 99A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM50AM35FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 50 0 200 6.5V 6V 5.5V 5V TJ=25°C 100 0 0 TJ=125°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 4–6 APTM50AM35FTG – Rev 2 RDS(on) Drain to Source ON Resistance 1.1 1.05 VGS =10V 1 VGS=20V 0.95 0.9 0 20 40 60 80 100 ID, Drain Current (A) 120 www.microsemi.com ID, DC Drain Current (A) Normalized to VGS=10V @ 49.5A APTM50AM35FTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 I D, Drain Current (A) limited by RDSon ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID=49.5A 100 us 100 1 ms 10 Single pulse TJ =150°C TC=25°C 1 10 ms 100 ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) July, 2006 VDS=400V ID=99A TJ=25°C VDS=100V VDS=250V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50AM35FTG – Rev 2 APTM50AM35FTG Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) V DS=333V RG=1Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH td(off) tf tr td(on) Switching Energy vs Current 6 Switching Energy (mJ) 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy (mJ) VDS=333V RG=1Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 10 VDS=333V ID=99A TJ=125°C L=100µH Eon 8 6 4 2 0 0 Eoff Eon Eoff Eoff 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 O perating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 I D, Drain Current (A) 80 90 ZCS Hard switching ZVS V DS=333V D=50% R G=1Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 450 100 T J=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50AM35FTG – Rev 2