APTM50AM38FTG

APTM50AM38FTG Phase leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G1 S1 OUT Q2 G2 S2 0/VBU S NT C1 G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50AM38FTG – Rev 2 Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A mJ July, 2006 APTM50AM38FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 38 3 Max 200 1000 45 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Ω Min Typ 11.2 2.4 0.18 246 66 130 18 35 87 77 1510 1452 2482 1692 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 90A IS = - 90A VR = 333V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 233 499 3.8 11.4 Max 90 67 1.3 15 Unit A V V/ns ns µC July, 2006 2–6 APTM50AM38FTG – Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 90A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com APTM50AM38FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 50 T J=125°C 0 25 0 TJ=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 DC Drain Current vs Case Temperature 100 80 60 40 20 0 V GS=20V 50 100 150 200 25 www.microsemi.com 4–6 APTM50AM38FTG – Rev 2 July, 2006 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APTM50AM38FTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS =10V ID=45A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 100µs limited by R DSon 100 limited by RDSon 10 Single pulse TJ =150°C TC=25°C 1 1ms 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS , Gate to Source Voltage (V) C, Capacitance (pF) 10000 Coss Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50AM38FTG – Rev 2 APTM50AM38FTG Delay Times vs Current 100 td(off) Rise and Fall times vs Current 120 100 VDS=333V RG=2Ω T J=125°C L=100µH t d(on) and td(off) (ns) 80 60 40 20 0 20 40 60 80 100 120 ID, Drain Current (A) 140 V DS =333V RG =2Ω T J=125°C L=100µH td(on) tf tr and t f (ns) 80 60 40 20 0 20 tr 40 60 80 100 120 140 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 5 Switching Energy (mJ) 8 Switching Energy (mJ) 4 3 2 1 0 20 VDS=333V RG=2Ω T J=125°C L=100µH Eon 7 6 5 4 3 2 1 0 0 VDS=333V ID=90A TJ=125°C L=100µH Eoff Eoff Eon Eoff 5 10 15 20 25 40 60 80 100 120 140 I D, Drain Current (A) Operating Frequency vs Drain Current Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 350 Frequency (kHz) ZVS 300 250 200 150 100 50 0 20 30 40 50 60 Hard switching V DS=333V D=50% R G=2Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 400 1000 T J=150°C 100 ZCS 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 70 80 ID, Drain Current (A) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50AM38FTG – Rev 2