APTM50AM38SCTG

APTM50AM38SCTG Phase leg Series & SiC parallel diodes VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration MOSFET Power Module NTC2 VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 • • • • OUT VBUS OUT 0/ VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A mJ July, 2006 1–8 APTM50AM38SCTG – Rev 2 Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM50AM38SCTG All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Tj = 25°C T j = 125°C Typ VGS = 10V, ID = 45A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 38 3 Max 200 1000 45 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Ω Min Typ 11.2 2.36 0.18 246 66 130 18 35 87 77 906 1452 1490 1692 Max Unit nF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 90A IF = 180A IF = 90A IF = 90A VR = 133V di/dt = 600A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 500 750 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 99 450 ns nC www.microsemi.com 2–8 APTM50AM38SCTG – Rev 2 July, 2006 Tj = 125°C 90 1.1 1.4 0.9 1.15 V APTM50AM38SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 50A Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Min 600 Typ 250 500 50 1.6 2.0 70 325 250 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.18 0.45 0.5 150 125 100 4.7 160 Typ 50 3952 Max Max 1000 5000 1.8 2.4 Unit V µA A V nC pF IF = 50A, VR = 300V di/dt =1400A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Unit °C/W V °C N.m g Unit kΩ K P arallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 300 250 200 150 100 50 0 0 8V 7.5V 7V 6.5V 6V 5.5V 200 150 100 TJ=25°C 50 T J=125°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A) Normalized to VGS=10V @ 45A VGS=10V TJ=-55°C 25 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 DC Drain Current vs Case Temperature 100 80 60 40 20 0 V GS=20V 50 100 150 200 ID, Drain Current (A) www.microsemi.com 5–8 APTM50AM38SCTG – Rev 2 July, 2006 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50AM38SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 Crss 100 VGS , Gate to Source Voltage (V) 1000 limited by R DSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS =10V ID=45A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100µs 100 limited by RDSon 10 Single pulse TJ =150°C TC=25°C 1 1ms 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 VDS=400V 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 6–8 APTM50AM38SCTG – Rev 2 APTM50AM38SCTG Delay Times vs Current 100 80 60 40 20 0 20 40 60 80 100 120 ID, Drain Current (A) 140 V DS =333V RG =2Ω T J=125°C L=100µH Rise and Fall times vs Current td(off) 120 100 tr and t f (ns) VDS=333V RG=2Ω T J=125°C L=100µH t d(on) and td(off) (ns) tf 80 60 40 20 0 20 td(on) tr 40 60 80 100 120 140 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 4 Switching Energy (mJ) 8 Switching Energy (mJ) 3 2 1 VDS=333V RG=2Ω T J=125°C L=100µH Eoff 7 6 5 4 3 2 1 0 0 VDS=333V ID=90A TJ=125°C L=100µH Eoff Eon Eon Eoff 0 20 40 60 80 100 120 140 I D, Drain Current (A) Operating Frequency vs Drain Current 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 350 Frequency (kHz) 300 250 200 150 100 50 0 20 30 ZCS ZVS V DS=333V D=50% R G=2Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 400 1000 100 T J=150°C Hard switching 10 T J=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 40 50 60 70 80 ID, Drain Current (A) VSD, Source to Drain Voltage (V) www.microsemi.com 7–8 APTM50AM38SCTG – Rev 2 APTM50AM38SCTG Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (°C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100 I F Forward Current (A) TJ=25°C IR Reverse Current (µA) 1000 800 600 400 200 0 200 TJ =175°C TJ =125°C TJ =75°C TJ=25°C 75 50 25 0 0 0.5 TJ =75°C TJ=175°C TJ =125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 300 400 500 600 700 VR Reverse Voltage (V) 800 2000 C, Capacitance (pF) 1500 1000 500 0 July, 2006 8–8 APTM50AM38SCTG – Rev 2 1 10 100 VR Reverse Voltage 1000 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. 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