APTM50DHM35G

APTM50DHM35G Asymmetrical - bridge MOSFET Power Module VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4 VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Applicatio n • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • G4 0/VBUS S4 • • • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT1 G1 S1 VBUS 0/VBUS Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S4 G4 OUT2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DHM35G – Rev 2 July, 2006 Max ratings 500 99 74 396 ±30 39 781 51 50 3000 Unit V A V mΩ W A APTM50DHM35G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 49.5A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 35 3 Max 200 1000 39 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 99A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, R G = 1 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, R G = 1 Ω Min Typ 14 2.8 0.2 280 80 140 21 38 75 93 2070 1690 3112 2026 Max Unit nF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/µs Min 600 Tj = 25°C Tj = 125°C Tc = 60°C Typ Max 250 500 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1.6 1.9 1.4 180 220 390 1450 1.8 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM50DHM35G – Rev 2 July, 2006 trr Reverse Recovery Time ns APTM50DHM35G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.16 0.6 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 50 0 200 6.5V 6V 5.5V 5V TJ=25°C 100 0 0 TJ=125°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50DHM35G – Rev 2 July, 2006 RDS(on) Drain to Source ON Resistance 1.1 1.05 VGS =10V 1 VGS=20V 0.95 0.9 0 20 40 60 80 100 ID, Drain Current (A) 120 www.microsemi.com ID, DC Drain Current (A) Normalized to VGS=10V @ 49.5A 4–6 APTM50DHM35G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 I D, Drain Current (A) limited by RDSon ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID=49.5A 100 us 100 1 ms 10 Single pulse TJ =150°C TC=25°C 1 10 ms 100 ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) APTM50DHM35G – Rev 2 July, 2006 VDS=400V ID=99A TJ=25°C VDS=100V VDS=250V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50DHM35G Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) V DS=333V RG=1Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH td(off) tf tr td(on) Switching Energy vs Current 6 Switching Energy (mJ) 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy (mJ) VDS=333V RG=1Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 10 VDS=333V ID=99A TJ=125°C L=100µH Eon 8 6 4 2 0 0 Eoff Eon Eoff Eoff 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 O perating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 I D, Drain Current (A) 80 90 ZCS Hard switching ZVS V DS=333V D=50% R G=1Ω T J=125°C T C=75°C IDR, Reverse Drain Current (A) 450 100 T J=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM50DHM35G – Rev 2 July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6