APTM50DSKM65T3G

APTM50DSKM65T3G Dual Buck chopper MOSFET Power Module 13 14 Q1 18 22 19 CR1 23 8 CR2 7 10 Q2 11 VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability • RoHS Compliant 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DSKM65T3G – Rev 1 Max ratings 500 51 38 204 ±30 78 390 51 50 3000 Unit V A V mΩ W A July, 2006 APTM50DSKM65T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C Tj = 125°C 65 3 VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V Max 100 500 78 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A R G = 3Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, R G = 3 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, R G = 3 Ω Min Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=600V Tj = 25°C Tj = 125°C Tc = 70°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 350 600 Unit V µA A V ns µC IF = 80A IF = 80A VR = 300V di/dt=4500A/µs 80 1.45 1.35 95 115 5.2 8 www.microsemi.com 2–6 APTM50DSKM65T3G – Rev 1 July, 2006 APTM50DSKM65T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 0.8 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 100 75 50 25 0 TJ=25°C TJ=125°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 60 RDS(on) Drain to Source ON Resistance 1.1 1.05 Normalized to VGS =10V @ 25.5A VGS=10V 50 40 30 20 10 0 1 VGS=20V 0.95 0.9 0 10 20 30 40 50 ID, Drain Current (A) www.microsemi.com 4–6 APTM50DSKM65T3G – Rev 1 July, 2006 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50DSKM65T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 I D, Drain Current (A) limited by RDSon ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 25.5A 100 100 us 10 Single pulse TJ =150°C TC=25°C 1 1 ms 10 ms 1 100 ms 0.1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 July, 2006 VDS=400V ID=51A TJ=25°C VDS=100V VDS=250V 10000 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 Gate Charge (nC) www.microsemi.com 5–6 APTM50DSKM65T3G – Rev 1 APTM50DSKM65T3G Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 I D, Drain Current (A) 70 80 V DS=333V RG =3Ω T J=125°C L=100µH td(off) Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 VDS=333V RG=3Ω T J=125°C L=100µH tf tr td(on) Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 70 80 I D, Drain Current (A) O perating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 45 hard switching ZCS ZVS VDS=333V D=50% RG=3Ω TJ=125°C TC=75°C Switching Energy vs Gate Resistance 5 V DS =333V ID=51A T J=125°C L=100µH Eon Switching Energy (mJ) VDS=333V RG=3Ω TJ=125°C L=100µH 4 3 2 1 0 0 Eoff Eon Eoff Eoff 5 10 15 20 25 30 35 40 45 Gate Resistance (Ohms) I DR, Reverse Drain Current (A) 450 Source to Drain Diode Forward Voltage 1000 100 T J=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 July, 2006 VSD, Source to Drain Voltage (V) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DSKM65T3G – Rev 1 M icrosemi reserves the right to change, without notice, the specifications and information contained herein