APTM50DUM17G

APTM50DUM17G Dual common source MOSFET Power Module VDSS = 500V RDSon = 17mΩ typ @ Tj = 25°C ID = 180A @ Tc = 25°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G2 D1 Q1 D2 Q2 G1 S1 S S2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G1 S1 D1 S D2 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DUM17G – Rev 2 July, 2006 Tc = 25°C Max ratings 500 180 135 720 ±30 20 1250 51 50 3000 Unit V A V mΩ W A APTM50DUM17G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 17 3 Max 400 2000 20 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 180A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5 Ω Min Typ 28 5.6 0.36 560 160 280 21 38 75 93 4140 3380 6224 4052 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 180A IS = -180A, VR = 333V diS/dt = 400A/µs 680 61 Max 180 135 1.3 8 Unit A V V/ns ns µC www.microsemi.com 2–6 APTM50DUM17G – Rev 2 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 180A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APTM50DUM17G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 100 0 400 6.5V 6V 5.5V 5V TJ=25°C 200 0 0 TJ=125°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 ID, DC Drain Current (A) 250 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 4–6 APTM50DUM17G – Rev 2 RDS(on) Drain to Source ON Resistance 1.1 1.05 Normalized to VGS=10V @ 90A V GS=10V 1 V GS=20V 0.95 0.9 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com APTM50DUM17G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 limited by R DSon ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 us VGS=10V ID=90A I D, Drain Current (A) 100 1 ms 10 Single pulse TJ =150°C TC=25°C 10 ms 100 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) July, 2006 VDS=400V ID=180A TJ=25°C VDS=100V VDS=250V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM50DUM17G – Rev 2 APTM50DUM17G Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 40 80 120 160 200 240 ID, Drain Current (A) 280 V DS=333V RG=0.5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 40 80 120 160 200 240 ID, Drain Current (A) 280 VDS=333V RG=0.5Ω TJ=125°C L=100µH td(off) tf tr td(on) Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 40 80 120 160 200 240 ID, Drain Current (A) 280 Eon Switching Energy (mJ) VDS=333V RG=0.5Ω T J=125°C L=100µH Switching Energy vs Gate Resistance 20 16 12 8 4 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C VDS=333V ID=180A TJ=125°C L=100µH Eoff Eon Eoff Eoff Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 I D, Drain Current (A) Hard switching ZVS ZCS VDS=333V D=50% RG=0.5Ω TJ=125°C TC=75°C IDR, Reverse Drain Current (A) 450 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DUM17G – Rev 2 APTM50DUM17G www.microsemi.com 7–6 APTM50DUM17G – Rev 2 July, 2006