APTM50H10FT3G

APTM50H10FT3G Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 500V RDSon = 100mΩ typ @ Tj = 25°C ID = 37A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM50H10FT3G – Rev 2 July, 2006 Max ratings 500 37 28 140 ±30 120 312 37 50 1600 Unit V A V mΩ W A APTM50H10FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C Tj = 125°C 100 3 VGS = 10V, ID = 18.5A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Max 100 500 120 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 37A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 37A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Ω Test Conditions Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 37A IS = - 37A VR = 333V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 4367 894 61 96 24 49 15 21 73 52 566 545 931 635 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Min Typ 37 28 Max Unit A 1.3 15 280 600 2.3 6.4 V V/ns ns µC www.microsemi.com 2-6 APTM50H10FT3G – Rev 2 July, 2006 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 37A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C APTM50H10FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle T J=-55°C 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 30 20 VGS =20V 1.00 0.95 0.90 0 20 40 60 80 ID, Drain Current (A) 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50H10FT3G – Rev 2 July, 2006 www.microsemi.com 4-6 APTM50H10FT3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 VGS , Gate to Source Voltage (V) 1000 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID=18.5A 100µs 100 limited by RDSon limited by R DSon 1ms 10 Single pulse TJ =150°C TC=25°C 1 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 Gate Charge (nC) APTM50H10FT3G – Rev 2 July, 2006 VDS=400V ID=37A T J=25°C V DS =100V VDS=250V C, Capacitance (pF) 10000 Ciss Coss 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5-6 APTM50H10FT3G Delay Times vs Current 80 td(off) VDS=333V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 100 80 t r and tf (ns) 60 40 20 0 tr VDS=333V RG=5Ω T J=125°C L=100µH t d(on) and td(off) (ns) 60 tf 40 20 td(on) 0 10 20 30 40 50 60 ID, Drain Current (A) 70 10 20 30 40 50 60 70 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2 Switching Energy (mJ) 2.5 Switching Energy (mJ) 1.6 1.2 0.8 0.4 0 10 VDS=333V RG=5Ω TJ=125°C L=100µH Eon 2 1.5 1 0.5 0 V DS=333V ID=35A T J=125°C L=100µH Eoff Eoff Eon Eoff 20 30 40 50 60 0 10 20 30 40 50 I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 5 10 15 20 25 30 35 ID, Drain Current (A) hard switching ZCS V DS=333V D=50% R G=5Ω T J=125°C T C=75°C ZVS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 450 1000 100 T J=150°C 10 T J=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM50H10FT3G – Rev 2 July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6