APTM50H14FT3G

APTM50H14FT3G VDSS = 500V RDSon = 140m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Full - Bridge MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (Per MOSFET) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 26 18 105 ±30 168 208 35 30 1300 Unit V A December, 2017 ID Parameter Drain - Source Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-7 APTM50H14FT3G – Rev 3 Symbol VDSS APTM50H14FT3G Electrical Characteristics (Per MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 10V, ID = 13A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Min Typ 140 3 Max 100 168 5 ±100 Unit µA m V nA Max Unit Dynamic Characteristics (Per MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 3259 709 51 pF 72 VGS = 10V VBus = 250V ID = 26A 20 nC 36 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 26A RG = 5 10 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 26A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 26A, RG = 5Ω 326 17 ns 50 41 µJ 250 548 µJ 288 0.6 °C/W Source - Drain diode ratings and characteristics (Per MOSFET) trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 26 18 VGS = 0V, IS = - 26A IS = - 26A VR = 333V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Max A 1.3 15 250 525 1.6 6 Unit V V/ns ns µC www.microsemi.com December, 2017  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 26A di/dt  700A/µs VR  VDSS Tj  150°C 2-7 APTM50H14FT3G – Rev 3 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM50H14FT3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax - 25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T   exp B25 / 85   T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-7 APTM50H14FT3G – Rev 3 December, 2017 Package outline (dimensions in mm) APTM50H14FT3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 80 7V 60 6.5V 40 6V 20 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 7.5V ID, Drain Current (A) 5.5V 60 50 40 30 TJ=25°C 20 10 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 13A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 VGS=20V 1.05 2 30 ID, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) 1.00 0.95 0.90 25 20 15 10 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 December, 2017 ID, Drain Current (A) 10 80 100 RDS(on) Drain to Source ON Resistance 1 4-7 APTM50H14FT3G – Rev 3 Thermal Impedance (°C/W) 0.7 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=13A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 75 100 125 150 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon 100µs limited by RDSon 10 Single pulse TJ=150°C TC=25°C 1 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) 10000 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss Coss 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 1ms 10ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=26A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 20 40 60 Gate Charge (nC) 80 100 December, 2017 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 Maximum Safe Operating Area 1.1 -50 -25 C, Capacitance (pF) 25 1000 1.2 100000 0 TJ, Junction Temperature (°C) 5-7 APTM50H14FT3G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50H14FT3G APTM50H14FT3G Delay Times vs Current Rise and Fall times vs Current 60 80 VDS=333V RG=5Ω TJ=125°C L=100µH 60 td(off) 40 tr and tf (ns) VDS=333V RG=5Ω TJ=125°C L=100µH 30 20 td(on) tf 40 20 tr 10 0 0 0 10 20 30 40 50 60 0 10 ID, Drain Current (A) 0.8 0.6 Eoff 0.2 VDS=333V ID=26A TJ=125°C L=100µH 1 60 Eoff Eon 0.5 Eoff 0 0 10 20 30 40 50 0 60 ID, Drain Current (A) Operating Frequency vs Drain Current ZCS ZVS 300 IDR, Reverse Drain Current (A) 400 VDS=333V D=50% RG=5Ω TJ=125°C TC=75°C 200 Hard switching 100 0 5 10 15 20 20 30 40 50 Gate Resistance (Ohms) 600 500 10 1000 25 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com December, 2017 0 Frequency (kHz) 50 Switching Energy vs Gate Resistance Eon 0.4 40 1.5 Switching Energy (mJ) Switching Energy (mJ) VDS=333V RG=5Ω TJ=125°C L=100µH 1 30 ID, Drain Current (A) Switching Energy vs Current 1.2 20 6-7 APTM50H14FT3G – Rev 3 td(on) and td(off) (ns) 50 APTM50H14FT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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