APTM50H15FT1G
Full - Bridge MOSFET Power Module
3 Q1 4 Q3 2 6 Q2 7 1 Q4 9
VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant
5
8 NTC
10
11
12
Pins 3/4 must be shorted together
•
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 500 25 19 135 ±30 156 208 21 Unit V
February, 2010 1–5 APTM50H15FT1G – Rev 0
A V mΩ W A
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM50H15FT1G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 21A VGS = VDS, ID = 1mA VGS = ±30 V Min Typ Max 250 1000 156 5 ±100 Unit µA mΩ V nA
3
130 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 21A Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 21A RG = 4.7Ω Min Typ 5448 735 72 170 38 80 29 35 80 26 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 21A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0.90 2.6 Min Typ Max 25 19 1 30 215 370 Unit A V V/ns ns µC
IS = - 21A VR = 100V diS/dt = 100A/µs
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 21A di/dt ≤ 1000A/µs VDD ≤ 333V Tj ≤ 125°C
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APTM50H15FT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C
RDSon, Drain to Source ON resistance
Normalized RDSon vs. Temperature 2.5 2 1.5 1 0.5
VGS=10V ID=21A
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 30 60 90 120 150 180 Gate Charge (nC)
VDS=400V ID=21A TJ=25°C VDS=100V VDS=250V
10000
Ciss
1000
Coss
100
Crss
10 VDS, Drain to Source Voltage (V)
February, 2010 APTM50H15FT1G – Rev 0
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50
100
150
200
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APTM50H15FT1G
Drain Current vs Source to Drain Voltage 60 ISD, Reverse Drain Current (A) 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2
TJ=25°C TJ=125°C
VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (°C/W) 0.6 0.5
0.7 0.9
0.4
0.5
0.3 0.2 0.1
0.3 0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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