APTM50HM75FT3G
VDSS = 500V
RDSon = 75m typ @ Tj = 25°C
ID = 46A @ Tc = 25°C
Full - Bridge
MOSFET Power Module
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
46
34
184
±30
90
357
46
50
2500
Unit
V
A
December, 2017
ID
Parameter
Drain - Source Voltage
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1–7
APTM50HM75FT3G – Rev 3
Symbol
VDSS
APTM50HM75FT3G
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 500V
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Min
Typ
75
3
Max
100
90
5
±150
Unit
µA
m
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
5600
1200
90
pF
123
VGS = 10V
VBus = 250V
ID = 46A
33
nC
65
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 46A
RG = 5
18
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
755
35
ns
87
77
µJ
726
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
1241
µJ
846
0.35
°C/W
Source - Drain diode ratings and characteristics
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 46A
IS = - 46A
VR = 333V
diS/dt = 100A/µs
Tj = 25°C
233
Tj = 125°C
499
Tj = 25°C
1.9
Tj = 125°C
5.7
Max
46
34
1.3
15
Unit
A
V
V/ns
ns
µC
December, 2017
trr
Test Conditions
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR VDSS
Tj 150°C
IS - 46A di/dt 700A/µs
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2–7
APTM50HM75FT3G – Rev 3
Symbol Characteristic
Continuous Source current
IS
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTM50HM75FT3G
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
150
TJmax - 25
125
125
3
110
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B25 / 85
T25 T
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
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3–7
APTM50HM75FT3G – Rev 3
December, 2017
Package outline (dimensions in mm)
APTM50HM75FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.9
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
160
Transfert Characteristics
8V
VGS=10&15V
140
ID, Drain Current (A)
7.5V
120
100
7V
80
6.5V
60
40
6V
20
5.5V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
TJ=25°C
20
TJ=125°C
TJ=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 23A
1.15
3
4
5
6
7
8
DC Drain Current vs Case Temperature
VGS=10V
1.10
1.05
2
50
ID, DC Drain Current (A)
1.20
1
VGS, Gate to Source Voltage (V)
VGS=20V
1.00
0.95
0.90
0.85
0.80
40
30
20
10
0
0
20
40
60
80
100
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
December, 2017
ID, Drain Current (A)
10
120
180
RDS(on) Drain to Source ON Resistance
1
150
4–7
APTM50HM75FT3G – Rev 3
Thermal Impedance (°C/W)
0.4
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (°C)
ON resistance vs Temperature
2.5
VGS=10V
ID=23A
2.0
1.5
1.0
0.5
0.0
-50 -25
75 100 125 150
Maximum Safe Operating Area
1.1
ID, Drain Current (A)
1.0
0.9
0.8
0.7
0.6
100
limited
by R
limited
byDSon
RDSon
10
100µs
Single pulse
TJ=150°C
TC=25°C
1ms
10ms
1
0
25
50
75 100 125 150
1
TC, Case Temperature (°C)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
VDS=100V
ID=46A
12 T =25°C
J
V =250V
DS
10
VDS=400V
8
6
4
2
0
50
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0
20
40 60 80 100 120 140 160
Gate Charge (nC)
December, 2017
VGS(TH), Threshold Voltage
(Normalized)
50
1000
-50 -25
C, Capacitance (pF)
25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
100000
0
5–7
APTM50HM75FT3G – Rev 3
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50HM75FT3G
APTM50HM75FT3G
Delay Times vs Current
Rise and Fall times vs Current
120
td(off)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
20
80
60
40
tr
20
0
0
10
20
30
40
50
60
70
10
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
2
1.5
40
50
60
70
Switching Energy vs Gate Resistance
Eon
Eoff
1
30
4
Switching Energy (mJ)
0.5
VDS=333V
ID=46A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
Eon
1.5
1
Eoff
0.5
0
0
10
20
30
40
50
60
0
70
ID, Drain Current (A)
Operating Frequency vs Drain Current
300
ZCS
250
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZVS
200
150
100
hard
switching
50
0
10
15
20
25
30
20
30
40
50
Gate Resistance (Ohms)
400
350
10
35
1000
100
Source to Drain Diode Forward Voltage
TJ=150°C
10
TJ=25°C
1
40
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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December, 2017
Switching Energy (mJ)
2.5
20
ID, Drain Current (A)
Switching Energy vs Current
Frequency (kHz)
tf
6–7
APTM50HM75FT3G – Rev 3
td(on) and td(off) (ns)
100
APTM50HM75FT3G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–7
APTM50HM75FT3G – Rev 3
December, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.