APTM50HM75STG

APTM50HM75STG Full bridge Series & parallel diodes MOSFET Power Module VB US CR1A CR3A VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 O UT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/V BUS NTC2 G4 S4 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant G3 S3 G4 S4 OUT2 VBUS 0/VB US OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50HM75STG – Rev 4 Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A V mΩ W A July, 2006 APTM50HM75STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C Tj = 125°C 75 3 VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V Max 100 500 90 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, R G = 5 Ω Min Typ 5600 1200 90 123 33 65 18 35 87 77 755 726 1241 846 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 250 500 Unit V µA A 30 1.1 1.4 0.9 48 33 150 24 1.15 V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com 2–6 APTM50HM75STG – Rev 4 July, 2006 APTM50HM75STG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt = 200A/µs Test Conditions VR=600V Tj = 25°C Tj = 125°C Tc = 70°C Min 600 Typ Max 250 500 30 1.6 1.9 1.4 85 160 130 700 Min Transistor Diode 2500 -40 -40 -40 2.5 Typ Max 0.35 1.2 150 125 100 4.7 160 Typ 50 3952 Max 1.8 V Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Unit °C/W V °C N.m g Unit kΩ K RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle T J=25°C TJ=125°C T J=-55°C 25 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 V GS=20V 20 40 60 80 100 25 www.microsemi.com 4–6 APTM50HM75STG – Rev 4 July, 2006 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APTM50HM75STG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperatur e BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature V GS=10V ID=23A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 VGS, Gate to Source Voltage (V) Ciss Coss 1000 Maximum Safe Operating Area 100 limited by Ry R on limited b DSonDS 100µs 10 Single pulse TJ=150°C TC=25°C 1 1ms 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) C, Capacitance (pF) 10000 Gate Charge vs Gate to Source Voltage 14 VDS=100V I D=46A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 VDS=400V 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50HM75STG – Rev 4 APTM50HM75STG Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 I D, Drain Current (A) 70 VDS=333V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 120 100 t r and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 I D, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 Eoff Eon VDS=333V ID=46A T J=125°C L=100µH VDS=333V RG=5Ω T J=125°C L=100µH td(off) t d(on) and td(off) (ns) tf td(on) tr Switching Energy vs Current 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 10 20 30 40 50 60 70 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A) hard switching ZCS V DS=333V D=50% R G=5Ω T J=125°C T C=75°C VDS=333V RG=5Ω TJ=125°C L=100µH Eon Eoff Eoff 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage ZVS IDR, Reverse Drain Current (A) 400 1000 100 TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50HM75STG – Rev 4