APTM60H23FT1G

APTM60H23FT1G Full - Bridge MOSFET Power Module 3 Q1 4 Q3 2 6 Q2 7 1 Q4 9 VDSS = 600V RDSon = 190mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant 5 8 NTC 10 11 12 Pins 3/4 must be shorted together • Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 600 20 15 125 ±30 230 208 17 Unit V January, 2010 1–5 APTM60H23FT1G – Rev 0 A V mΩ W A Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM60H23FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 600V VGS = 0V Tj = 125°C VGS = 10V, ID = 17A VGS = VDS, ID = 1mA VGS = ±30 V Min Typ Max 250 1000 230 5 ±100 Unit µA mΩ V nA 3 190 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 17A Resistive switching @ 25°C VGS = 15V VBus = 400V ID = 17A RG = 4.7Ω Min Typ 5316 610 56 165 36 70 37 43 115 34 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 17A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0.76 1.91 Min Typ Max 20 15 1 30 200 370 Unit A V V/ns ns µC IS = - 17A VR = 100V diS/dt = 100A/µs dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C www.microsemi.com 2–5 APTM60H23FT1G – Rev 0 January, 2010 APTM60H23FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=25°C 1 2 3 4 5 6 7 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 C, Capacitance (pF) 10 8 6 VDS=480V ID=17A TJ=25°C VDS=120V VDS=300V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 1000 100 10 1 Crss Ciss Coss 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC) VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 APTM60H23FT1G – Rev 0 January, 2010 0 50 100 150 200 APTM60H23FT1G Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 60 50 40 TJ=125°C 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 TJ=25°C Thermal Impedance (°C/W) 0.6 0.5 0.4 0.9 0.7 0.5 0.3 0.2 0.1 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM60H23FT1G – Rev 0 January, 2010