APTMC60TLM55CT3AG

APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 40m @ Tj = 25°C Application  Uninterruptible Power Supplies Features  SiC Power MOSFET - Low RDS(on) - High temperature performance       SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  Low profile  RoHS Compliant All multiple inputs and outputs must be shorted together 10/11/12 ; 7/8 ; 27/28 ; … All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) IDM VGS VGSOP RDSon PD Continuous Drain Current Tc = 25°C Tc = 80°C Pulsed Drain current Gate - Source Voltage Gate - Source Voltage, recommended operation values Drain - Source ON Resistance Power Dissipation Tc = 25°C Max ratings 1200 48 38 100 -6/+23 -5/18 52 263 Unit V March, 2017 ID Parameter Drain - Source Breakdown Voltage A V m W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-9 APTMC60TLM55CT3AG – Rev 3 Symbol VDSS APTMC60TLM55CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET) Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V ; VDS = 1200V VGS = 20V ; ID = 40A Tj = 25°C VGS = 18V ; ID = 40A Tj = 175°C VGS = VDS, ID = 10mA VGS = 20 V, VDS = 0V Min Typ 10 40 90 2 Max 100 52 Unit µA 4 250 V nA Max Unit m Q1 to Q4 Dynamic Characteristics (per SiC MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RGint Internal gate resistance RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min 28 nC 37 12 VGS = -5/+20V VBus = 800V ID = 40A RL = 20Ω ; RG = 25 VGS = -5/+20V VBus = 600V ID = 40A RG = 25 pF 115 VGS = -5/20V VBus = 800V ID = 40A Inductive Switching Typ 1893 150 10 14 ns 23 18 Tj = 150°C 0.9 mJ Tj = 150°C 0.5 mJ 1.8  0.57 °C/W Max 600 180 900 Unit V CR5 & CR6 SiC diode ratings and characteristics (Per SiC diode) IF Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC VR=600V Min Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 30A Tj = 175°C IF = 30A, VR = 600V di/dt =1000A/µs Typ 30 60 30 1.6 2 195 f = 1MHz, VR = 400V 150 Junction to Case Thermal Resistance A 1.8 2.4 84 f = 1MHz, VR = 200V V nC pF 0.8 www.microsemi.com µA March, 2017 IRM Test Conditions °C/W 2-9 APTMC60TLM55CT3AG – Rev 3 Symbol Characteristic VRRM Peak Repetitive Reverse Voltage APTMC60TLM55CT3AG CR7 & CR8 SiC diode ratings and characteristics (Per SiC diode) Symbol Characteristic VRRM Peak Repetitive Reverse Voltage IRM Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Test Conditions VR=1200V Min Tj = 25°C Tj = 175°C Typ Max 1200 600 3000 96 168 30 1.6 2.3 Tc = 125°C Tj = 25°C Tj = 175°C IF = 30A, VR = 1200V di/dt =1500A/µs IF = 30A 288 f = 1MHz, VR = 400V 207 µA A 1.8 3 240 f = 1MHz, VR = 200V Unit V V nC pF Junction to Case Thermal Resistance 0.50 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com ). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R 25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1   exp B 25 / 85   T25 T   Thermal and package characteristics Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g March, 2017 Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight www.microsemi.com 3-9 APTMC60TLM55CT3AG – Rev 3 Symbol VISOL TJ TJOP TSTG TC Torque Wt APTMC60TLM55CT3AG Package outline (dimensions in mm) www.microsemi.com 4-9 APTMC60TLM55CT3AG – Rev 3 March, 2017 See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com APTMC60TLM55CT3AG Q1 to Q4 Typical performance curve Output Characteristics Output Characteristics 80 TJ=25°C 60 TJ=175°C IDS, Drain Source Current (A) IDS , Drain Source Current (A) 80 V GS =20V V GS =15V 40 20 0 0 1 2 3 4 5 60 V GS=18V V GS =15V 40 20 0 0 V DS , Drain Source Voltage (V) IDS, Drain Source Current (A) RDSon, Drain Source ON resistance VGS=20V I D=40A 1.8 1.6 1.4 1.2 1 0.8 25 50 75 100 125 4 5 6 7 8 150 50 40 30 TJ=175°C 20 10 TJ=25°C 0 175 1 TJ, Junction Temperature (°C) 2 3 4 5 6 7 8 9 10 V GS, Gate Source Voltage (V) Sw itching energy vs Rg sw itching energy vs current 1.5 1.75 VGS=-5/20V R G =25Ω VBUS= 600V TJ = 150°C 1.5 1.25 Losses (mJ) Eon Losses (mJ) 3 60 2.4 2 2 Transfert Characteristics Norm alized RDS(on) vs. Tem perature 2.2 1 V DS, Drain Source Voltage (V) 1 0.75 VGS=-5/20V I D= 40A VBUS = 600V TJ = 150°C Eof f 0.5 1.25 1 0.75 30 40 50 60 70 Eof f 0.5 0.25 0.25 20 Eon 0 80 0 10 20 Gate resistance (ohm) 30 40 50 60 70 80 Current (A) D = 0.9 0.4 March, 2017 0.5 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-9 APTMC60TLM55CT3AG – Rev 3 Thermal Im pedance (°C/W) Maxim um Effective Transient Thermal Im pedance, Junction to Case vs Pulse Duration 0.6 APTMC60TLM55CT3AG Gate Charge vs Gate Source Voltage Capacitance vs Drain Source Voltage V GS , Gate to Source Voltage (V) 10000 C, Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 0 200 400 600 800 20 10 5 0 -5 1000 0 V DS, Drain source Voltage (V) 20 40 60 Body diode Characteristics -10 -20 -30 VGS=0V -40 VGS=-2V -50 -60 -70 TJ=25°C -4 -3 -2 -10 -40 -50 VGS=15V -60 VGS=20V -70 TJ=25°C -80 V DS, Drain source voltage (V) 3rd quadrant Characteristics -5 0 0 VGS=-5V -10 -20 VGS=0V -30 VGS=-2V -40 -50 -60 -70 TJ=175°C IDS, Drain source current (A) IDS , Body diode current (A) -30 VGS=5V Body diode Characteristics -1 0 -20 V DS, Drain source voltage (V) -2 -1 0 -80 -3 120 VGS=0V IDS, Drain source current (A) VGS=-5V -4 100 3rd quadrant Characteristics -5 0 -5 80 Gate Charge (nC) -5.5 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 IDS , Body diode current (A) TJ = 25°C I D = 40A VDS = 800V 15 -80 V DS, Drain source voltage (V) -4 -3 -2 -1 0 0 VGS=0V -10 VGS=5V -20 -30 VGS=20V -40 -50 VGS=15V -60 TJ=175°C -70 -80 V DS , Drain source voltage (V) Operating Frequency vs Drain Current 600 300 ZCS 200 100 Hard switching 0 10 20 30 40 50 ID, Drain Current (A) www.microsemi.com 6-9 APTMC60TLM55CT3AG – Rev 3 Frequency (kHz) ZVS 400 March, 2017 VBUS=600V D=50% R G =25Ω TJ=150°C TC=75°C 500 APTMC60TLM55CT3AG CR5 & CR6 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 D = 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 60 600 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 50 TJ=75°C 40 TJ=175°C 30 TJ=125°C 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) TJ=175°C 500 400 TJ=125°C 300 TJ=75°C 200 TJ=25°C 100 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 1000 800 600 400 March, 2017 200 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 7-9 APTMC60TLM55CT3AG – Rev 3 C, Capacitance (pF) 1200 APTMC60TLM55CT3AG CR7 & CR8 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 D = 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 60 300 40 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 50 TJ=75°C 30 TJ=125°C 20 10 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 225 150 TJ=75°C TJ=125°C 75 TJ=175°C TJ=25°C 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 2100 1500 1200 900 600 March, 2017 300 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 8-9 APTMC60TLM55CT3AG – Rev 3 C, Capacitance (pF) 1800 APTMC60TLM55CT3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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