APTML602U12R020T3AG_10

APTML602U12R020T3AG Linear MOSFET Power Module VDSS = 600V RDSon = 125mΩ typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 28 27 26 25 29 30 23 22 20 19 18 16 15 • • • • • • 31 32 2 3 4 7 8 10 11 12 14 13 Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 13/14 ; 29/30 ; 31/32 must be shorted together Absolute maximum ratings (per leg) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 45* 33* 172 ±30 150 568 45 50 3000 Unit V A V mΩ W A mJ Tc = 25°C * Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification. In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APTML602U12R020T3AG – Rev 1 March, 2010 APTML602U12R020T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VDS = 600V ; VGS = 0V VDS = 480V ; VGS = 0V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 22.5A VGS = VDS, ID = 2.5mA VGS = ±30 V 125 2 Max 25 250 150 4 ±100 Unit µA mΩ V nA Dynamic Characteristics (per leg) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 7600 1280 620 Max Unit pF Shunt Electrical Characteristics (per leg) Symbol Characteristic Resistance value Rsh Tsh Tolerance Psh Ish Load capacity Current capacity TC=25°C TC=80°C TC=25°C TC=80°C Min Typ 20 2 Max Unit mΩ % W A 20 10 31 22 Temperature sensor PTC Symbol R25 R100/R25 R-55/R25 B Characteristic Resistance @ 25°C Resistance ratio Resistance ratio Temperature coefficient Tamb=100°C & 25°C Tamb=-55°C & 25°C Min 1980 1.676 0.48 Typ 1.696 0.49 7900 Max 2020 1.716 0.50 Unit Ω ppm/K Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Min MOSFET (per leg) 4000 -40 -40 -40 2.5 Typ Max 0.22 150 125 100 4.7 110 RMS Isolation Voltage, any terminal to case t =1 min, I isol